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參數(shù)資料
| 型號(hào)： | M5M51008BKV-70VL |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 61K |
| 代理商： | M5M51008BKV-70VL |
MITSUBISHI LSIs
M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L,
-55LL,-70LL,-10LL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
1997-3/25
MITSUBISHI
ELECTRIC
4
(2) READ CYCLE
(3) WRITE CYCLE
Symbol
Parameter
t
CR
t
a(A)
Read cycle time
Address access time
Chip select 1 access time
Chip select 2 access time
Output enable access time
Output disable time after S
1
high
Output disable time after S
2
low
Output disable time after OE high
Output enable time after S
1
low
Output enable time after S
2
high
Output enable time after OE low
Data valid time after address
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
Parameter
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Min
100
75
Max
Min
70
55
Min
100
Max
Min
70
Max
Limits
-70L,LL
t
a(S1)
t
a(S2)
t
a(OE)
t
dis(S1)
t
dis(S2)
t
dis(OE)
t
en(S1)
t
en(S2)
t
en(OE)
t
V(A)
AC ELECTRICAL CHARACTERISTICS
(Ta=0~70°C, Vcc=5V±10%, unless otherwise noted)
(1) MEASUREMENT CONDITIONS
Input pulse level ·············· V
IH
=2.4V,V
IL
=0.6V (-70L,-10L,-70LL,-10LL)
V
IH
=3.0V,V
IL
=0.0V (-55L,-55LL)
Input rise and fall time ····· 5ns
Reference level ················ V
OH
=V
OL
=1.5V
Output loads ····················· Fig.1,C
L
=100pF (-10L,-10LL,)
C
L
=30pF (-55L,-70L,-55LL,-70LL)
C
L
=5pF (for t
en
,t
dis
)
Transition is measured ± 500mV from steady
state voltage. (for t
en
,t
dis
)
-10L,LL
100
100
100
50
35
35
35
10
10
5
10
70
70
70
35
25
25
25
10
10
5
10
55
55
55
30
20
20
20
55
5
5
5
5
Write cycle time
Write pulse width
Address setup time
Address setup time with respect to W
Chip select 1 setup time
Chip select 2 setup time
Data setup time
Data hold time
Write recovery time
Output disable time from W low
Output disable time from OE high
Output enable time from W high
Output enable time from OE low
20
20
55
45
0
50
50
50
25
0
0
5
5
25
25
0
65
65
65
30
0
0
5
5
35
35
0
85
85
85
40
0
0
5
5
Min
Max
-55L,LL
Max
Min
t
CW
t
w(W)
t
su(A)
t
su(A-WH)
t
su(S1)
t
su(S2)
t
su(D)
t
h(D)
t
rec(W)
t
dis(W)
t
dis(OE)
t
en(W)
t
en(OE)
Fig.1 Output load
C
( Including scope
and JIG )
990
1.8k
V
CC
DQ
Limits
-70L,LL
-10L,LL
-55L,LL
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PDF描述 |
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| M5M51008CKR-55 | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008CKR-55H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008CKR-55X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008CKR-70 | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008CKR-70H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M51008BKV-70VLL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008BP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008BP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008BP-10LL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008BP-55L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
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