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參數(shù)資料
| 型號(hào)： | M5M51008DRV-70H |
| 廠商： | Mitsubishi Electric Corporation |
| 元件分類： | DRAM |
| 英文描述： | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | M5M51008DRV-70H |
MITSUBISHI LSIs
M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L,
-55LL,-70LL,-10LL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
1997-3/25
MITSUBISHI
ELECTRIC
16
15
14
13
1
12
11
10
9
8
7
6
5
4
3
2
1
PIN CONFIGURATION (TOP VIEW)
NC : NO CONNECTION
DESCRIPTION
The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS
static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS
technology. The use of resistive load NMOS cells and CMOS
periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal
for the battery back-up application.
The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin
small outline package which is a high reliability and high density
surface mount device(SMD).Two types of devices are available.
VP,KV(normal lead bend type package),RV,KR(reverse lead bend
type package). Using both types of devices, it becomes very easy
to design a printed circuit board.
FEATURES
Type name
Access time
(max)
Active
(1MHz)
(max)
stand-by
(max)
Power supply current
Package
M5M51008BP
············
32pin 600mil DIP
M5M51008BFP
············
32pin 525mil SOP
M5M51008BVP,RV
············
32pin 8 X 20 mm TSOP
M5M51008BKV,KR
············
32pin 8 X 13.4 mm TSOP
APPLICATION
Small capacity memory units
Single +5V power supply
Low stand-by current 0.3μA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S
1
,S
2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
1
DQ
2
DQ
3
GND
V
CC
A
15
S
2
W
A
13
A
8
A
9
A
11
OE
A
10
S
1
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
A
11
A
9
A
8
A
13
W
S
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
OE
A
10
S
1
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
GND
DQ
3
DQ
2
DQ
1
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
12
A
11
A
2
A
1
A
0
DQ
1
DQ
2
DQ
3
GND
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
S
1
A
10
OE
A
3
M5M51008BP,FP,VP,RV,KV,KR-55L
55ns
70ns
100ns
55ns
70ns
100ns
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
17
18
19
20
32
M
M5M51008BVP,KV
A
14
A
16
NC
V
CC
A
15
S
2
W
A
13
A
8
A
9
21
22
23
24
25
26
27
28
29
30
31
Outline 32P4(P), 32P2M-A(FP)
Outline 32P3H-E(VP), 32P3K-B(KV)
ADDRESS
INPUT
CHIP SELECT
WRITE CONTROL
ADDRESS
INPUTS
OUTPUT ENABLE
CHIP SELECT
INPUT
DATA
INPUTS/
OUTPUTS
ADDRESS
INPUTS
DATA
INPUTS/
OUTPUTS
M5M51008BRV,KR
Outline 32P3H-F(RV), 32P3K-C(KR)
M5M51008BP,FP,VP,RV,KV,KR-70L
M5M51008BP,FP,VP,RV,KV,KR-10L
M5M51008BP,FP,VP,RV,KV,KR-55LL
M5M51008BP,FP,VP,RV,KV,KR-70LL
M5M51008BP,FP,VP,RV,KV,KR-10LL
15mA
15mA
100μA
(Vcc=5.5V)
20μA
(Vcc=5.5V)
0.3μA
(Vcc=3.0V,typ)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M51008BFP | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008DVP-55H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008DVP-70H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008BFP-10VL | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008BFP-10VLL | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M51008DRV-70H(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M51008DRV-70HIA0 | 制造商:Renesas Electronics Corporation 功能描述:128 X 8 1M LP SRAM REVERSED TS |
| M5M51008DVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008DVP-55H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M51008DVP-55H#ST | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 55ns 32-Pin TSOP-I T/R |
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