- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370978 > M5M5256DRV-70VLL-I (Mitsubishi Electric Corporation) 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | M5M5256DRV-70VLL-I |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| 中文描述： | 262144位（32768 - Word的8位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 62K |
| 代理商： | M5M5256DRV-70VLL-I |
MITSUBISHI LSIs
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M5256DFP,VP,RV -70VLL,-85VLL,
-70VXL,-85VXL
'97.4.7
FUNCTION
The operation mode of the M5M5256DP,FP,VP,RV is
determined by a combination of the device control inputs /S,
/W and /OE. Each mode is summarized in the function table. When setting /S at a high level, the chip is in a
A write cycle is executed whenever the low level /W
overlaps with the low level /S. The address must be set up
before the write cycle and must be stable during the entire
cycle. The data is latched into a cell on the trailing edge of
/W, /S, whichever occurs first, requiring the set-up and hold
time relative to these edge to be maintained. The output
enable /OE directly controls the output stage. Setting the
/OE at a high level,the output stage is in a high-impedance
state, and the data bus contention problem in the write cycle
is eliminated.
FUNCTION TABLE
Mode
DQ
Icc
/S
/W
/OE
Non selection
Write
Read
Stand-by
Active
Active
Active
High-impedance
D
IN
D
OUT
X
X
L
L
L
L
X
L
H
H
H
H
High-impedance
2
A read cycle is executed by setting /W at a high level and
/OE at a low level while /S are in an active state.
non-selectable mode in which both reading and writing are
disabled. In this mode, the output stage is in a
high-impedance state, allowing OR-tie with other chips and
memory expansion by /S. The power supply current is
reduced as low as the stand-by current which is specified
as Icc3 or Icc4, and the memory data can be held at +2V
power supply, enabling battery back-up operation during
power failure or power-down operation in the non-selected
mode.
VCC
(3.3V)
GND
27
20
22
2
2
3
4
6
5
7
25
26
1
8
9
10
21
23
24
12
11
13
15
16
17
18
19
A
B
R
(512 ROWS X
512 COLUMNS)
32768 WORD
X 8BIT
S
O
D
B
C
D
A
B
GENERATOR
CLOCK
A 14
A 13
A 8
A 12
A 6
A 7
A 10
A 0
A 1
A 2
A 3
A 4
A 5
A 11
A 9
/W
/OE
/S
28
14
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
ADDRESS
DATA I/O
WRITE CONTROL
INPUT
OUTPUT ENABLE
INPUT
CHIP SELECT
INPUT
BLOCK DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M5256DFP-70VXL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-70VXL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DFP-70VXL-I | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DFP-85VXL-I | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DVP-85VXL-I | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5256DRV-70VLL-W | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-70VXL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-70VXL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-70XL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DRV-85VLL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。