參數(shù)資料
型號(hào)： M5M54R01J-12
廠商： Mitsubishi Electric Corporation
英文描述： PTSE 19C 19#20 SKT RECP
中文描述： 4194304位（4194304字1位）的CMOS靜態(tài)RAM
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 55K
代理商： M5M54R01J-12
M5M54R01J-12,-15
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
MITSUBISHI LSIs
2
Icc
S
H
L
L
L
W
X
L
H
H
OE
X
X
L
H
Mode
Non selection
Write
Read
Stand by
Active
Active
Active
D
High-impedance
Din
High-impedance
The operation mode of the M5M54R01J is determined by a
combination of the device control inputs S, W and OE. Each
mode is summarized in the function table.
A write cycle is executed whenever the low level W overlaps
with the low level S. The address must be set-up before the
write cycle and must be stable during the entire cycle.
The data is latched into a cell on the trailing edge of W or S,
whichever occurs first, requiring the set-up and hold time
relative to these edge to be maintained. The output enable
input OE directly controls the output stage. Setting the OE at a
high level, the output stage is in a high impedance state, and
the data bus
contention problem in the write cycle is eliminated.
FUNCTION TABLE
A read cycle is excuted by setting W at a high level and OE
at a low level while S are in an active state (S=L).
When setting S at high level, the chip is in a non-selectable
mode in which both reading and writing are disable. In this
mode, the output stage is in a high-impedance state, allowing
OR-tie with other chips and memory expansion by S.
Signal-S controls the power-down feature. When S goes
high, power dissapation is reduced extremely. The access
time from S is equivalent to the address access time.
The RAM works with an organization of 4194304-word by 1
bit,when B1/B4 is low of floating. And an organization of 1048
576-word by 4bit is also obtained for reducing the test time,
when B1/B4 is high.
FUNCTION
High-impedance
Q
Dout
High-impedance
High-impedance
High-impedance
ABSOLUTE MAXIMUM RATINGS
Operating temperature
V
cc
V
I
V
O
P
d
T
opr
T
stg
V
V
V
mW
-3.5 ~ 7
1000
0 ~ 70
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Storage temperature
(bias)
Symbol
Unit
Conditions
With respect to GND
Ratings
-3.5 ~ VCC+0.3
T
stg(bias)
Storage temperature
-10 ~ 85
V
IH
V
IL
V
OH
V
OL
I
I
V
V
V
V
μ
A
μ
A
Vcc+0.3
0.8
2.2
2.4
0.4
Symbol
Parameter
Max
Typ
Limits
Min
Condition
Unit
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input current
I
CC1
I
CC2
I
CC3
mA
mA
160
I
OZ
2
10
AC
DC
10
Active supply current
(TTL level)
Stand by current
(TTL level)
Output current in off-state
Stand by current
90
100
75
150
12ns cycle
15ns cycle
mA
AC
DC
50
70
12ns cycle
15ns cycle
1
DC ELECTRICAL CHARACTERISTICS
-3.5 ~ VCC+0.3
-65 ~ 150
C
C
C
Ta=25 C
*Pulse width
≤
20ns, In case of DC:-0.5V
(Ta=0 ~ 70 C, Vcc=5V
±
10% unless otherwise noted)
-0.3
I
OH
=-4mA
I
OL
= 8mA
V
I
= 0~Vcc
V
I (S)
= V
IH
V
O
= 0~Vcc
V
I (S)
= V
IL
other inputs V
IH
or V
IL
Output-open(duty 100%)
V
I (S)
=
Vcc
≥
0.2V
other inputs V
I
≤
0.2V
or V
I
≥
Vcc-0.2V
V
I (S)
= V
IH
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參數(shù)描述
M5M54R01J-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
M5M54R04AJ-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
M5M54R04AJ-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
M5M54R04AJ-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
M5M54R04J-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
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