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參數(shù)資料
| 型號： | M5M564R16DTP-15 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 1048576位（65536字由16位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 90K |
| 代理商： | M5M564R16DTP-15 |
M5M564R16DJ,TP-10,-12,-15
MITSUBISHI LSIs
1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
(4)TIMING DIAGRAMS
A
0~15
Read cycle 1
t
CR
ta
(A)
tv
(A)
V
IH
V
IL
tv
(A)
PREVIOUS DATA VALID
UNKNOWN
DATA VALID
V
OH
V
OL
DQ
1~16
W=H
S=L
OE=L
Note 5. Addresses and S valid prior to OE transition low by (ta(A)-ta(OE)), (ta(S)-ta(OE))
Read cycle 2
(Note 3)
S
ta
(S)
W=H
OE=L
ten
(S)
t
dis
(S)
UNKNOWN
V
OH
V
OL
DQ
1~16
V
IH
V
IL
DATA VALID
t
PU
I
CC
1
I
CC
2
t
PD
50%
50%
(Note 4)
(Note 4)
Icc
t
CR
Read cycle 3
(Note 5)
OE
ta
(OE)
W=H
S=L
ten
(OE)
t
dis
(OE)
UNKNOWN
DATA VALID
V
OH
V
OL
DQ
1~16
V
IH
V
IL
(Note 4)
t
CR
(Note 4)
Note 3. Addresses valid prior to or coincident with S transition low.
4. Transition is measured
±
500mv from steady state voltage with specified loading in Figure 2.
LB=L
UB=L
UB=L
LB=L
5
UB=L
LB=L
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