參數(shù)資料
型號(hào): M5M5V416BWG-70H
廠商: Mitsubishi Electric Corporation
英文描述: 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
中文描述: 4194304位(262144字由16位)的CMOS靜態(tài)RAM
文件頁(yè)數(shù): 2/11頁(yè)
文件大?。?/td> 110K
代理商: M5M5V416BWG-70H
MITSUBISHI ELECTRIC
M5M5V416BTP,RT
revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
2
FUNCTION
The M5M5V416BTP,RT are organized as 262,144-words
by 16-bit. These devices operate on a single +2.7~3.6V
power supply, and are directly TTL compatible to both
input and output. Its fully static circuit needs no clocks
and no refresh, and makes it useful.
The operation mode are determined by a combination of
the device control inputs BC1 , BC2 , S1, S2 , W and OE.
Each mode is summarized in the function table.
A write operation is executed whenever the low level W
overlaps with the low level BC1 and/or BC2 and the low
level S1 and the high level S2. The address(A0~A17) must
be set up before the write cycle and must be stable during
the entire cycle.
A read operation is executed by setting W at a high level
and OE at a low level while BC1 and/or BC2 and S1 and
S2 are in an active state(S1=L,S2=H).
When setting BC1 at the high level and other pins are in
an active stage , upper-byte are in a selectable mode in
which both reading and writing are enabled, and lower-byte
are in a non-selectable mode. And when setting BC2 at a
high level and other pins are in an active stage, lower-
byte are in a selectable mode and upper-byte are in a
non-selectable mode.
When setting BC1 and BC2 at a high level or S1 at a high
level or S2 at a low level, the chips are in a non-selectable
mode in which both reading and writing are disabled. In this
mode, the output stage is in a high-impedance state, allowing
OR-tie with other chips and memory expansion by BC1, BC2
and S1, S2.
The power supply current is reduced as low as 0.3μA(25°C,
typical), and the memory data can be held at +2V power
supply, enabling battery back-up operation during power
failure or power-down operation in the non-selected mode.
FUNCTION TABLE
BLOCK DIAGRAM
MEMORY ARRAY
262144 WORDS
x 16 BITS
CLOCK
GENERATOR
A
0
A
1
A
16
A
17
S2
BC1
BC2
W
OE
DQ
8
DQ
1
DQ
16
DQ
9
-
Vcc
GND
S1
Mode
Non selection
S2
L
W
X
H
X
X
H
X
H
High-Z
High-Z High-Z
Din
Dout
High-Z High-Z
High-Z
High-Z
BC1 BC2
X
OE
X
DQ1~8
High-Z
X
X
X
X
Non selection
Non selection
Write
DQ9~16
High-Z Standby
Icc
High-Z Standby
Standby
H
H
H
H
H
X
L
H
X
L
L
H
H
L
H
L
L
L
H
H
H
H
H
L
L
High-Z
High-Z
Active
Active
Active
Active
Active
Read
H
H
H
L
L
L
Active
Active
H
L
High-Z
Din
High-Z
Active
H
L
H
X
H
High-Z
H
L
Dout
H
L
L
Read
Dout
Active
L
Write
Din
H
High-Z
Write
Read
Din
Dout
S1
H
H
X
L
L
L
L
L
L
L
L
L
L
X
X
High-Z
X
X
Non selection
High-Z Standby
L
X
相關(guān)PDF資料
PDF描述
M5M5V416BWG-70HI 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70HW 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70L 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70LW 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-85H 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M5V416BWG-70HI 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70HW 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70LW 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-85H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM