- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370984 > M5M5V416BWG-85HI (Mitsubishi Electric Corporation) 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | M5M5V416BWG-85HI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 4194304位（262144字由16位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 110K |
| 代理商： | M5M5V416BWG-85HI |
MITSUBISHI ELECTRIC
M5M5V416BTP,RT
revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
2
FUNCTION
The M5M5V416BTP,RT are organized as 262,144-words
by 16-bit. These devices operate on a single +2.7~3.6V
power supply, and are directly TTL compatible to both
input and output. Its fully static circuit needs no clocks
and no refresh, and makes it useful.
The operation mode are determined by a combination of
the device control inputs BC1 , BC2 , S1, S2 , W and OE.
Each mode is summarized in the function table.
A write operation is executed whenever the low level W
overlaps with the low level BC1 and/or BC2 and the low
level S1 and the high level S2. The address(A0~A17) must
be set up before the write cycle and must be stable during
the entire cycle.
A read operation is executed by setting W at a high level
and OE at a low level while BC1 and/or BC2 and S1 and
S2 are in an active state(S1=L,S2=H).
When setting BC1 at the high level and other pins are in
an active stage , upper-byte are in a selectable mode in
which both reading and writing are enabled, and lower-byte
are in a non-selectable mode. And when setting BC2 at a
high level and other pins are in an active stage, lower-
byte are in a selectable mode and upper-byte are in a
non-selectable mode.
When setting BC1 and BC2 at a high level or S1 at a high
level or S2 at a low level, the chips are in a non-selectable
mode in which both reading and writing are disabled. In this
mode, the output stage is in a high-impedance state, allowing
OR-tie with other chips and memory expansion by BC1, BC2
and S1, S2.
The power supply current is reduced as low as 0.3μA(25°C,
typical), and the memory data can be held at +2V power
supply, enabling battery back-up operation during power
failure or power-down operation in the non-selected mode.
FUNCTION TABLE
BLOCK DIAGRAM
MEMORY ARRAY
262144 WORDS
x 16 BITS
CLOCK
GENERATOR
A
0
A
1
A
16
A
17
S2
BC1
BC2
W
OE
DQ
8
DQ
1
DQ
16
DQ
9
-
Vcc
GND
S1
Mode
Non selection
S2
L
W
X
H
X
X
H
X
H
High-Z
High-Z High-Z
Din
Dout
High-Z High-Z
High-Z
High-Z
BC1 BC2
X
OE
X
DQ1~8
High-Z
X
X
X
X
Non selection
Non selection
Write
DQ9~16
High-Z Standby
Icc
High-Z Standby
Standby
H
H
H
H
H
X
L
H
X
L
L
H
H
L
H
L
L
L
H
H
H
H
H
L
L
High-Z
High-Z
Active
Active
Active
Active
Active
Read
H
H
H
L
L
L
Active
Active
H
L
High-Z
Din
High-Z
Active
H
L
H
X
H
High-Z
H
L
Dout
H
L
L
Read
Dout
Active
L
Write
Din
H
High-Z
Write
Read
Din
Dout
S1
H
H
X
L
L
L
L
L
L
L
L
L
L
X
X
High-Z
X
X
Non selection
High-Z Standby
L
X
相關PDF資料 |
PDF描述 |
|---|---|
| M5M5V416BWG-85L | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BWG-85LI | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BWG-85LW | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V4R01J-12 | PTSE 5C 5#16 PIN RECP |
| M5M5V4R01J-15 | PTSE 5C 5#16 PIN RECP |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5V416BWG-85HW | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BWG-85L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BWG-85LI | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416BWG-85LW | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V416CWG-55HI | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。