參數(shù)資料
型號(hào): M5M5V416BWG
廠商: Mitsubishi Electric Corporation
英文描述: 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
中文描述: 4194304位(262144字由16位)的CMOS靜態(tài)RAM
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 110K
代理商: M5M5V416BWG
MITSUBISHI ELECTRIC
M5M5V416BTP,RT
revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
6
Note 3: Hatching indicates the state is "don't care".
Note 4: A Write occurs during S1 low, S2 high overlaps BC1 and/or BC2 low and W low.
Note 5: When the falling edge of W is simultaneously or prior to the falling edge of BC1 and/or BC2 or the falling edge of S1
or rising edge of S2, the outputs are maintained in the high impedance state.
Note 6: Don't apply inverted phase signal externally when DQ pin is in output mode.
t
h
(D)
t
su
(D)
DQ
1~16
t
su
(BC1) or
t
su
(BC2)
t
rec
(W)
t
su
(A)
t
CW
A
0~17
W
Write cycle (BC control mode)
DATA IN
STABLE
(Note3)
(Note3)
(Note4)
(Note5)
(Note3)
(Note3)
S1
BC1,BC2
(Note3)
(Note3)
S2
相關(guān)PDF資料
PDF描述
M5M5V416BWG-70H 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70HI 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70HW 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70L 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70LW 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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