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參數(shù)資料
| 型號： | M5M5W816WG-85LI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 8388608位（524288字由16位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | M5M5W816WG-85LI |
MITSUBISHI ELECTRIC
M5M5W816WG -85L, 10L, 85H, 10H
-85LI, 10LI, 85HI, 10HI
1999.1.15
Ver. 0.1
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
* Typical parameter indicates the value for the center
of distribution, and not 100% tested.
1
DESCRIPTION
The M5M5W816 is a family of low voltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.18μm CMOS technology.
The M5M5W816 is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5W816WG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It gives the best solution for a compaction
of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
From the point of operating temperature, the family is divided
into two versions; "Standard" and "I-version".
FEATURES
- Single 1.8~2.7V power supply
- Small stand-by current: 0.1μA (2.7V, typ.)
- No clocks, No refresh
- Data retention supply voltage =1.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1, S2, BC1 and BC2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prevents data contention in the I/O bus
- Process technology: 0.18μm CMOS
- Package: 48ball 7.0mm x 8.5mm CSP
PIN CONFIGURATION
A0 ~ A18
DQ1 ~ DQ16
S1
S2
W
OE
BC1
BC2
Address input
Data input / output
Chip select input 1
Chip select input 2
Write control input
Output enable input
Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Pin
Function
Vcc
GND
Power supply
Ground supply
(TOP VIEW)
Outline:
48FHA
NC: No Connection
1
2
3
4
5
6
A
B
C
D
E
F
G
DQ3
A7
DQ1
S2
VCC
GND
DQ7
A2
S1
DQ2
DQ4
DQ5
DQ6
A1
A4
A6
A5
A17
A16
A15
A0
A3
GND
A14
OE
BC2
DQ11
DQ12
DQ13
DQ14
BC1
DQ9
DQ10
GND
VCC
DQ15
DQ8
W
A13
A12
N.C.
DQ16
N.C.
A11
A10
A9
A8
H
Those are summarized in the part name table below.
100ns
85ns
1.8 ~ 2.7V
---
40mA
(10MHz)
5mA
(1MHz)
85ns
M5M5W816WG -85L
M5M5W816WG -10L
M5M5W816WG -85H
Version,
Operating
temperature
Standard
0 ~ +70°C
Part name
Power
Supply
Access time
max.
Stand-by current (Vcc=2.7V)
* Typical
25°C
40°C
Ratings (max.)
40°C
Active
current
Icc1
(2.7V, typ.)
70°C
85°C
25°C
M5M5W816WG -10H
M5M5W816WG -85LI
M5M5W816WG -10LI
M5M5W816WG -85HI
100ns
85ns
1.8 ~ 2.7V
100ns
85ns
1.8 ~ 2.7V
I-version
-40 ~ +85°C
M5M5W816WG -10HI
100ns
1.8 ~ 2.7V
---
15
30
8
8
2
2
---
16
16
---
1
1
---
---
0.2
0.1
0.2
0.1
0.2
0.1
0.2
0.1
A18
相關PDF資料 |
PDF描述 |
|---|---|
| M5M5W816WG-10H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-10HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-10L | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-10LI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5Y416CWG-70HI | 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
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| M5M5W817KT-70HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M80011A | 制造商:Mitsubishi Electric 功能描述: |
| M5M82C54P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS PROGRAMMABLE INTERVAL TIMER |
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