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參數(shù)資料
| 型號： | M68AW064FL55ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64K x16 3.0V Asynchronous SRAM |
| 中文描述： | 1兆位64K的x16 3.0V異步SRAM |
| 文件頁數(shù)： | 7/18頁 |
| 文件大?。?/td> | 265K |
| 代理商： | M68AW064FL55ZB6T |
7/18
M68AW064F
Table 4. Capacitance
Note: 1. Sampled only, not 100% tested.
2. At T
A
= 25°C, f = 1 MHz, V
CC
= 3.0V.
3. Outputs deselected.
Table 5. DC Characteristics
Note: 1. Average AC current, cycling at t
AVAV
minimum.
2. All other Inputs at V
IL
≤
0.15V or V
IH
≥
V
CC
–0.15V.
3. Output disabled.
Symbol
Parameter
(1,2)
Test
Condition
Min
Max
Unit
C
IN
Input Capacitance on all pins (except DQ)
V
IN
= 0V
6
pF
C
OUT(3)
Output Capacitance
V
OUT
= 0V
8
pF
Symbol
Parameter
Test Condition
M68AW064F
Unit
55
70
Min
Typ
Max
Min
Typ
Max
I
CC1 (1)
Operating Supply
Current
V
CC
= 3.6V, f = 1/t
AVAV
,
I
OUT
= 0mA
7
20
15
mA
I
CC2
Operating Supply
Current
V
CC
= 3.6V, f = 1MHz,
I
OUT
= 0mA
1
2
1
2
mA
I
SB (2)
Standby Supply Current
CMOS
V
CC
= 3.6V,
E
≥
V
CC
–0.15V, f = 0
0.5
15
0.5
15
μA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
–1
1
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC (3)
–1
1
–1
1
μA
V
IH
Input High Voltage
V
CC
= 2.7V
2.0
V
CC
+ 0.3
2.0
V
CC
+ 0.3
V
V
IL
Input Low Voltage
V
CC
= 2.7V
–0.3
0.4
–0.3
0.4
V
V
OH
Output High Voltage
V
CC
= 2.7V,
I
OH
= –1.0mA
2.2
2.2
V
V
OL
Output Low Voltage
V
CC
= 2.7V,
I
OL
= 2.1mA
0.4
0.4
V
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