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參數(shù)資料
| 型號： | M68AW127BM70N1T |
| 廠商： | 意法半導體 |
| 英文描述： | 1Mbit 128K x8, 3.0V Asynchronous SRAM |
| 中文描述： | 1Mbit的128K的× 8，3.0V異步SRAM |
| 文件頁數(shù)： | 10/20頁 |
| 文件大?。?/td> | 327K |
| 代理商： | M68AW127BM70N1T |
M68AW127B
10/20
Table 7. Read and Standby Mode AC Characteristics
Note: 1. Test conditions assume transition timing reference level = 0.3V
CC
or 0.7V
CC
.
2. At any given temperature and voltage condition, t
GHQZ
is less than t
GLQX
and t
EHQZ
is less than t
ELQX
for any given device.
3. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
4. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Parameter
M68AW127B
Unit
70
100
t
AVAV
Read Cycle Time
Min
70
100
ns
t
AVQV
Address Valid to Output Valid
Max
70
100
ns
t
AXQX (1)
Data hold from address change
Min
5
15
ns
t
EHQZ
(2,3)
Chip Enable High to Output Hi-Z
Max
25
30
ns
t
ELQV
Chip Enable Low to Output Valid
Max
70
100
ns
t
ELQX (1)
Chip Enable Low to Output Transition
Min
5
10
ns
t
GHQZ (2,3)
Output Enable High to Output Hi-Z
Max
25
30
ns
t
GLQV
Output Enable Low to Output Valid
Max
35
50
ns
t
GLQX (2)
Output Enable Low to Output Transition
Min
5
5
ns
t
PD (4)
Chip Enable or UB/LB High to Power Down
Max
0
0
ns
t
PU (4)
Chip Enable or UB/LB Low to Power Up
Min
70
100
ns
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| M68AW127BM70NK6 | 功能描述:靜態(tài)隨機存取存儲器 1 MBIT (128K X8)靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M68AW127BM70NK6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM |
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