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參數(shù)資料
| 型號(hào)： | M68AW256MN55ZB1F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（256K × 16）3.0V異步SRAM |
| 文件頁數(shù)： | 4/23頁 |
| 文件大?。?/td> | 152K |
| 代理商： | M68AW256MN55ZB1F |
M68AW256M
4/23
SUMMARY DESCRIPTION
The M68AW256M is a 4 Mbit (4,194,304 bit)
CMOS SRAM, organized as 262,144 words by 16
bits. The device features fully static operation re-
quiring no external clocks or timing strobes, with
equal address access and cycle times. It requires
a single 2.7 to 3.6V supply. This device has an au-
tomatic power-down feature, reducing the power
consumption by over 99% when deselected.
The M68AW256 is available in TFBGA48 (6x8mm
- 6x8 active ball array, 0.75mm pitch), TFBGA48
(7x8mm - 6x8 active ball array, 0.75 mm pitch) and
in TSOP44 Type II packages.
In addition to the standard version, both packages
are also available in Lead-free version, in compli-
ance with the JEDEC Std J-STD-020B, the ST
ECOPACK 7191395 Specification, and the RoHS
(Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free solder-
ing processes.
Figure 2. Logic Diagram
Table 1. Signal Names
AI04870b
18
A0-A17
W
DQ0-DQ15
VCC
M68AW256M
G
16
E
UB
LB
VSS
A0-A17
Address Inputs
DQ0-DQ15
Data Input/Output
E
Chip Enable
G
Output Enable
W
Write Enable
UB
Upper Byte Enable Input
LB
Lower Byte Enable Input
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
DU
Don’t Use as Internally Connected
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M68AW256MN55ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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