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參數(shù)資料
| 型號： | M68AW256MN70ZB6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（256K × 16）3.0V異步SRAM |
| 文件頁數(shù)： | 20/23頁 |
| 文件大?。?/td> | 152K |
| 代理商： | M68AW256MN70ZB6F |
M68AW256M
20/23
Figure 17. TFBGA48 7x8mm - 6x8 ball array, 0.75 mm pitch, Bottom View Package Outline
Note: Drawing is not to scale.
Table 12. TFBGA48 7x8mm - 6x8 ball array, 0.75 mm pitch, Package Mechanical Data
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.200
0.0472
A1
0.260
0.0102
A2
0.900
0.0354
b
0.350
0.450
0.0138
0.0177
D
7.000
6.900
7.100
0.2756
0.2717
0.2795
D1
3.750
–
–
0.1476
–
–
ddd
0.100
0.0039
E
8.000
7.900
8.100
0.3150
0.3110
0.3189
E1
5.250
–
–
0.2067
–
–
e
0.750
–
–
0.0295
–
–
FD
1.625
–
–
0.0640
–
–
FE
1.375
–
–
0.0541
–
–
SD
0.375
–
–
0.0148
–
–
SE
0.375
–
–
0.0148
–
–
E1
E
D1
D
e
b
A2
A1
A
BGA-Z22
ddd
FD
FE
SD
SE
e
BALL "A1"
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PDF描述 |
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| M68AW256MN70ZH1 | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH1E | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH1F | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH1T | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH6 | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M68AW256MN70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN70ZH1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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