參數(shù)資料
型號(hào)： M68AW256MN70ZH1T
廠商： 意法半導(dǎo)體
英文描述： 4 Mbit (256K x16) 3.0V Asynchronous SRAM
中文描述： 4兆位（256K × 16）3.0V異步SRAM
文件頁(yè)數(shù)： 22/23頁(yè)
文件大?。?/td> 152K
代理商： M68AW256MN70ZH1T
M68AW256M
22/23
REVISION HISTORY
Table 14. Document Revision History
Date
Version
Revision Details
February 2002
-01
First Issue
13-Mar-2002
-02
Tables
4
,
7
and
9
clarified
Figure
14
clarified
17-Jun-2002
-03
I
CCDR
clarified (Table
9
)
I
SB
clarified (Table
6
)
09-Oct-2002
3.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 03 equals 3.0).
Part number modified.
20-Feb-2004
4.0
TFBGA48 7x8 replaced by TFBGA48 6x7:
Figure 16., TFBGA48 6x8mm - 6x8 active
ball array, 0.75 mm pitch, Bottom View Package Outline
and
Table 11., TFBGA48
6x8mm - 6x8 active ball array, 0.75 mm pitch, Package Mechanical Data
updated.
I
CC1
and I
SB
updated in
Table 6., DC Characteristics
.
t
WLWH
updated in
Table 8., Write Mode AC Characteristics
.
Minor content modifications.
FEATURES SUMMARY
,
SUMMARY DESCRIPTION
,
Table 13., Ordering
Information Scheme
updated with Package Lead-free information. TLEAD parameter
added in
Table 3., Absolute Maximum Ratings
.
27-Apr-2004
5.0
TFBGA48 7x8mm - 6x8 active ball array, 0.75mm pitch reintroduced.
TFBGA 6x7mm -6x8mm active ball array replaced by TFBGA48 6x8mm- 6x8 active
ball array, 0.75mm pitch.
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M68AW256MN70ZH6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256MN70ZH6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256MN70ZH6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256MN70ZH6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW511A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM
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