參數(shù)資料
型號: M68AW511AL55NC6T
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit (512K x8) 3.0V Asynchronous SRAM
中文描述: 4兆位(為512k × 8)3.0V異步SRAM
文件頁數(shù): 6/18頁
文件大?。?/td> 132K
代理商: M68AW511AL55NC6T
M68AW511A
6/18
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 3. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Parameter
M68AW511A
V
CC
Supply Voltage
2.7 to 3.6V
Ambient Operating Temperature
Range 1
0 to 70°C
Range 6
–40 to 85°C
Load Capacitance (C
L
)
30pF
Output Circuit Protection Resistance (R
1
)
3.0k
Load Resistance (R
2
)
3.1k
Input Rise and Fall Times
1ns/V
Input Pulse Voltages
0 to V
CC
Input and Output Timing Ref. Voltages
V
CC
/2
Input and Output Transition Timing Ref. Voltages
V
OL
= 0.3V
CC
; V
OH
= 0.7V
CC
AI04831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
I/O Transition Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI03853
VCC
OUT
CL includes JIG capacitance
DEVICE
UNDER
TEST
CL
R1
R2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M68AW511AL70MC1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM
M68AW511AL70MC1U 功能描述:RAM其它 4M (512Kx8) 70ns RoHS:否 制造商:Freescale Semiconductor 封裝:Tray
M68AW511AL70MC6T 功能描述:靜態(tài)隨機存取存儲器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
M68AW511AL70NC1 制造商:STMicroelectronics 功能描述:
M68AW511AL70NC1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM