參數(shù)資料
型號: M68Z128
廠商: 意法半導(dǎo)體
英文描述: 5V, 1Mbit(128Kbx8) Low Power SRAM with Output Enable(1Mb低功耗SRAM)
中文描述: 5V的,一個容量為1Mbit(128Kbx8)低功率SRAM的輸出使能(1兆低功耗的SRAM)
文件頁數(shù): 7/12頁
文件大?。?/td> 69K
代理商: M68Z128
Symbol
Parameter
M68Z128
Unit
-55
Min
Max
t
AVAV
Write Cycle Time
55
ns
t
AVWL
Address Valid to Write Enable Low
0
ns
t
AVWH
Address Valid to Write Enable High
45
ns
t
AVE1H
Address Valid to Chip Enable 1 High
45
ns
t
AVE2L
Address Valid to Chip Enable 2 Low
45
ns
t
WLWH
Write Enable Pulse Width
45
ns
t
WHAX
Write Enable High to Address Transition
0
ns
t
WHDX
Write Enable High to Input Transition
0
ns
t
WHQX(2)
Write Enable High to Output Transition
5
ns
t
WLQZ
(1,2)
Write Enable Low to Output Hi-Z
20
ns
t
AVE1L
Address Valid to Chip Enable 1 Low
0
ns
t
AVE2H
Address Valid to Chip Enable 2 High
0
ns
t
E1LE1H
Chip Enable 1 Low to Chip Enable 1 High
45
ns
t
E2HE2L
Chip Enable 2 High to Chip Enable 2 Low
45
ns
t
E1HAX
Chip Enable 1 High to Address Transition
0
ns
t
E2LAX
Chip Enable 2 Low to Address Transition
0
ns
t
DVWH
Input Validto Write Enable High
25
ns
t
DVE1H
Input Validto Chip Enable 1 High
25
ns
t
DVE2L
Input Validto Chip Enable 2 Low
25
ns
Note:
1. C
= 5pF (see Figure 4)
2. At any given temperature and voltage condition,t
WHQX
is less thant
WLQZ
forany given device.
Table8. WriteModeAC Characteristics
(T
A
= 0 to 70
°
C; V
CC
= 5V
±
10%)
7/12
M68Z128
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