參數(shù)資料
型號: M74HC04M1R
廠商: 意法半導體
元件分類: 電容
英文描述: CERAMIC CHIP/MIL-PRF-55681
中文描述: 陶瓷芯片/mil-prf-55681
文件頁數(shù): 3/8頁
文件大?。?/td> 167K
代理商: M74HC04M1R
M74HC04
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per Gate)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Low Level Input
Voltage
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
OH
High Level Output
Voltage
I
O
=-20
μ
A
I
O
=-20
μ
A
I
O
=-20
μ
A
I
O
=-4.0 mA
I
O
=-5.2 mA
I
O
=20
μ
A
I
O
=20
μ
A
I
O
=20
μ
A
I
O
=4.0 mA
I
O
=5.2 mA
1.9
4.4
5.9
4.18
5.68
2.0
4.5
6.0
4.31
5.8
0.0
0.0
0.0
0.17
0.18
1.9
4.4
5.9
4.13
5.63
1.9
4.4
5.9
4.10
5.60
V
V
OL
Low Level Output
Voltage
0.1
0.1
0.1
0.26
0.26
0.1
0.1
0.1
0.33
0.33
0.1
0.1
0.1
0.40
0.40
V
I
I
Input Leakage
Current
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
±
0.1
±
1
±
1
μ
A
I
CC
6.0
V
I
= V
CC
or GND
1
10
20
μ
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
tLH
t
tHL
Output Transition
Time
2.0
4.5
6.0
2.0
4.5
6.0
38
8
6
45
9
8
75
15
13
95
19
16
95
19
16
120
24
20
110
22
19
145
29
25
ns
t
PLH
t
PHL
Propagation Delay
Time
ns
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
5.0
5
10
10
10
pF
5.0
22
pF
相關PDF資料
PDF描述
M74HC04TTR CERAMIC CHIP/MIL-PRF-55681
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