VCC DC Supply Voltage" />
參數(shù)資料
型號(hào): M74VHC1G126DTT1G
廠商: ON Semiconductor
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 0K
描述: IC BUFFER TRI-ST NON-INV 5TSOP
標(biāo)準(zhǔn)包裝: 3,000
系列: 74VHC
邏輯類(lèi)型: 緩沖器/線路驅(qū)動(dòng)器,非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 1
輸出電流高,低: 8mA,8mA
電源電壓: 2 V ~ 5.5 V
工作溫度: -55°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 6-TSOP(0.059",1.50mm 寬)5 引線
供應(yīng)商設(shè)備封裝: 5-TSOP
包裝: 帶卷 (TR)
其它名稱(chēng): M74VHC1G126DTT1GOS
M74VHC1G126DTT1GOS-ND
M74VHC1G126DTT1GOSTR
MC74VHC1G126DTT1GOS
MC74VHC1G126DTT1GOS-ND
MC74VHC1G126
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
0.5 to +7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.5 to 7.0
0.5 to VCC + 0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air
SC88A, TSOP5
200
mW
qJA
Thermal resistance
SC88A, TSOP5
333
°C/W
TL
Lead temperature, 1 mm from case for 10 secs
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 200
N/A
V
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22A114A
2. Tested to EIA/JESD22A115A
3. Tested to JESD22C101A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
T J
=
90
T J
=
100
T J
=
1
10
T J
=
130
T J
=
120
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
相關(guān)PDF資料
PDF描述
M74VHC1GT50DTT1G IC BUFF CMOS LVL/SFTR N-I 5TSOP
20020009-H031B01LF TERM BLK PLUG 3 POS 5.08MM
OSTOQ123251 TERM BLOCK HDR 3.81MM 12POS PCB
20020009-G031B01LF TERM BLK PLUG 3 POS 5.00MM
OSTOQ123250 TERM BLOCK HDR 3.81MM 12POS PCB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M74VHC1G132DFT1G 功能描述:邏輯門(mén) 2-5.5V Single 2-Input NAND Schmitt RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量(輸入/輸出):2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
M74VHC1G132DFT2G 功能描述:邏輯門(mén) 2-5.5V Single 2-Input NAND Schmitt RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量(輸入/輸出):2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
M74VHC1G132DTT1G 功能描述:邏輯門(mén) 2-5.5V Single 2-Input NAND Schmitt RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量(輸入/輸出):2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
M74VHC1G132DTT1G 制造商:ON Semiconductor 功能描述:IC NAND GATE SCHMITT TRIGGER SOT-23-5
M74VHC1G135DFT1G 功能描述:邏輯門(mén) 2-5.5V Single 2-Input NAND Schmitt RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量(輸入/輸出):2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel