VCC
參數(shù)資料
型號(hào): M74VHC1GT126DF1G
廠商: ON Semiconductor
文件頁數(shù): 3/6頁
文件大小: 0K
描述: IC BUFF CMOS LVL/SFTR N-I SOT353
產(chǎn)品變化通告: Wire Change for SC88/A 17/Jun/2011
標(biāo)準(zhǔn)包裝: 1
系列: 74VHC
邏輯類型: 緩沖器/線路驅(qū)動(dòng)器,非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 1
輸出電流高,低: 8mA,8mA
電源電壓: 3 V ~ 5.5 V
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP(5 引線),SC-88A,SOT-353
供應(yīng)商設(shè)備封裝: SC-70
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: M74VHC1GT126DF1GOSDKR
MC74VHC1GT126
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
TA = 25°C
TA ≤ 85°C
55 ≤ TA ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
Minimum HighLevel
Input Voltage
3.0
4.5
5.5
1.4
2.0
1.4
2.0
1.4
2.0
V
VIL
Maximum LowLevel
Input Voltage
3.0
4.5
5.5
0.53
0.8
0.53
0.8
0.53
0.8
V
VOH
Minimum HighLevel
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = 50 mA
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
VIN = VIH or VIL
IOH = 4 mA
IOH = 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
VOL
Maximum LowLevel
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 50 mA
3.0
4.5
0.0
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
0.52
IIN
Maximum Input Leak-
age Current
VIN = 5.5 V or GND
0 to
5.5
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.0
20
40
mA
ICCT
Quiescent Supply
Current
Input: VIN = 3.4 V
Other Input: VCC or GND
5.5
1.35
1.50
1.65
mA
IOPD
Output Leakage
Current
VOUT = 5.5 V
0.0
0.5
5.0
10
mA
IOZ
Maximum 3State
Leakage Current
VIN = VIH or VIL
VOUT = VCC or GND
5.5
± 0.25
± 2.5
± 2.5
mA
AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns
Symbol
Parameter
Test Conditions
TA = 25°C
TA ≤ 85°C
55 ≤ TA ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Maximum Propagation
Delay, A to Y
(Figures 3 and 5)
VCC = 3.3 ± 0.3 V CL = 15pF
CL = 50pF
5.6
8.1
8.0
11.5
1.0
9.5
13.0
12.0
16.0
ns
VCC = 5.0 ± 0.5 V CL = 15pF
CL = 50pF
3.8
5.3
5.5
7.5
1.0
6.5
8.5
8.5
10.5
tPZL,
tPZH
Maximum Output
Enable TIme,OE to Y
(Figures 4 and 5)
VCC = 3.3 ± 0.3 V CL = 15pF
RL = RI = 500 W
CL = 50pF
5.4
7.9
8.0
11.5
1.0
9.5
13.0
11.5
15.0
ns
VCC = 5.0 ± 0.5 V CL = 15pF
RL = RI = 500 W
CL = 50pF
3.6
5.1
5.1
7.1
1.0
6.0
8.0
7.5
9.5
tPLZ,
tPHZ
Maximum Output
Disable Time,OE to Y
(Figures 4 and 5)
VCC = 3.3 ± 0.3 V CL = 15pF
RL = RI = 500 W
CL = 50pF
6.5
8.0
9.7
13.2
1.0
11.5
15.0
14.5
18.0
ns
VCC = 5.0 ± 0.5 V CL = 15pF
RL = RI = 500 W
CL = 50pF
4.8
7.0
6.8
8.8
1.0
8.0
10.0
10.0
12.0
Cin
Maximum Input
Capacitance
4
10
10
10
pF
Cout
Maximum ThreeState
Output Capacitance
(Output in High
Impedance State)
6
pF
CPD
Power Dissipation Capacitance (Note 5)
Typical @ 25°C, VCC = 5.0 V
pF
14
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/4 (per buffer). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
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