VCC DC Supply Voltage" />
參數(shù)資料
型號: M74VHC1GT86DTT1G
廠商: ON Semiconductor
文件頁數(shù): 2/6頁
文件大小: 0K
描述: IC GATE OR EXCL 2IN CMOS 5TSOP
標準包裝: 1
系列: 74VHC
邏輯類型: XOR(異或)
電路數(shù): 1
輸入數(shù): 2
電源電壓: 3 V ~ 5.5 V
電流 - 靜態(tài)(最大值): 1µA
輸出電流高,低: 8mA,8mA
邏輯電平 - 低: 0.53 V ~ 0.8 V
邏輯電平 - 高: 1.4 V ~ 2 V
額定電壓和最大 CL 時的最大傳播延遲: 8.8ns @ 4.5V ~ 5.5V,50pF
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
供應商設備封裝: 5-TSOP
封裝/外殼: 6-TSOP(0.059",1.50mm 寬)5 引線
包裝: 標準包裝
其它名稱: M74VHC1GT86DTT1GOSDKR
MC74VHC1GT86
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
0.5 to +7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.5 to 7.0
0.5 to VCC + 0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air
SC88A, TSOP5
200
mW
qJA
Thermal resistance
SC88A, TSOP5
333
°C/W
TL
Lead temperature, 1 mm from case for 10 seconds
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 5)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Derating SC88A Package: –3 mW/°C from 65° to 125°C
TSOP5 Package: 3 mW/°C from 65° to 125°C
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
3.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.0
5.5
VCC
V
TA
Operating Temperature Range
55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
T J
=
90
T J
=
100
T J
=
1
10
T J
=
130
T J
=
120
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
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