參數(shù)資料
型號: M87C257-12C3TR
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM
中文描述: 地址鎖存256K 32K的× 8紫外線EPROM和檢察官辦公室存儲器
文件頁數(shù): 6/13頁
文件大?。?/td> 143K
代理商: M87C257-12C3TR
Symbol
Alt
Parameter
Test
Condition
M87C257
-10
Unit
-90
-12
-15/-20
Min Max Min Max Min Max Min Max
t
AVQV
t
ACC
Address Valid to
Output Valid
Address Valid to
Address Strobe Low
E = V
IL
, G = V
IL
90
100
120
150
ns
t
AVASL
t
AL
7
7
7
7
ns
t
ASHASL
t
LL
Address Strobe High
to Address Strobe Low
35
35
35
35
ns
t
ASLAX
t
LA
Address Strobe Low to
Address Transition
20
20
20
20
ns
t
ASLGL
t
LOE
Address Strobe Low
to Output Enable Low
20
20
20
20
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
90
100
120
150
ns
t
GLQV
t
OE
Output Enable Low to
Output Valid
E = V
IL
40
40
50
60
ns
t
EHQZ
(2)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
40
0
30
0
40
0
40
ns
t
GHQZ
(2)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
0
40
0
30
0
40
0
40
ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = V
IL
, G = V
IL
0
0
0
0
ns
Notes:
1. V
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –40 to 85
°
C, –40 to 105
°
C or –40 to 125
°
C; V
CC
= 5V
±
5% or 5V
±
10%; V
PP
= V
CC
)
AI00931
tAXQX
tEHQZ
DATA OUT
A0-A14
E
G
Q0-Q7
tASLAX
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
tAVQV
tASLGL
tASHASL
tAVASL
ASVPP
Figure 5. Read Mode AC Waveforms
6/13
M87C257
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