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參數(shù)資料
| 型號： | M87C257-20C7X |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
| 中文描述： | 地址鎖存256K 32K的× 8紫外線EPROM和檢察官辦公室存儲器 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 143K |
| 代理商： | M87C257-20C7X |
AI01822
3V
High Speed
0V
1.5V
2.4V
Standard
0.4V
2.0V
0.8V
Figure 3. AC Testing Input Output Waveform
AI01823
1.3V
OUT
CL = 30pF or 100pF
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 4. AC Testing Load Circuit
High Speed
Standard
Input Rise and Fall Times
≤
10ns
≤
20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
Input and Output Timing Ref. Voltages
1.5V
0.8V and 2V
Table 5. AC Measurement Conditions
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only, not 100% tested.
Table 6. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz )
System Considerations
The power switching characteristics of Advance
CMOS EPROMs require careful decoupling of the
devices. The supply current, I
CC
, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
this transient current peaks is dependent on the
capacitive and inductive loading of the device at the
output. The associated transient voltage peaks can
be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1
μ
F ceramic
capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7
μ
F bulk electrolytic capacitor should be used
between V
CC
and V
SS
for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
4/13
M87C257
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M87C257-20F1 | 功能描述:可擦除可編程ROM RO 511-M87C2T7-12F 32KX8 LATCH 可擦除可編程ROM RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| M87C257-20F1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
| M87C257-20F1X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
| M87C257-20F3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
| M87C257-20F3X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
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