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參數(shù)資料
| 型號(hào)： | M87C257-60F6X |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
| 中文描述： | 地址鎖存256K 32K的× 8紫外線EPROM和檢察官辦公室存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大小： | 143K |
| 代理商： | M87C257-60F6X |
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Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –1mA
V
CC
-0.8V
V
V
ID
A9 Voltage
11.5
12.5
V
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
2
μ
s
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μ
s
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μ
s
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
2
μ
s
t
ELEH
t
PW
Chip Enable Program Pulse Width
95
105
μ
s
t
EHQX
t
DH
Chip Enable High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address Transition
0
ns
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M87C257 are in the "1"
state. Data is introduced by selectively program-
ming "0"s into the desired bit locations. Although
only "0"s will be programmed, both "1"s and "0"s
can be present in the data word. The only way to
change a "0" to a "1" is by die exposition to ultra-
violet light (UV EPROM). The M87C257 is in the
programming mode when V
PP
input is at 12.75V, G
is at V
IH
and E is pulsed to V
IL
. The data to be
programmed is applied to 8 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. V
CC
is specified to
be 6.25 V
±
0.25 V.
7/13
M87C257
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| M87C257-60F7TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
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| M87C257-60XC1X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
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