- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377839 > M93C76 (意法半導(dǎo)體) Serial Microwire Bus EEPROM(串行EEPROM) PDF資料下載
參數(shù)資料
| 型號(hào)： | M93C76 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Serial Microwire Bus EEPROM(串行EEPROM) |
| 中文描述： | 微型導(dǎo)線串行總線的EEPROM（串行EEPROM中） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | M93C76 |
THERMAL DATA
TO220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case
Max
1.67
3.57
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
2.8
A
E
AS
42
mJ
E
AR
1.6
mJ
I
AR
1.8
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
30 V
T
c
= 125
o
C
250
1000
μ
A
μ
A
I
GSS
Gate-Source Leakage
Current (V
DS
= 0)
100
mA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
ID
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
I
D
= 1.4 A
I
D
= 1.4 A
T
c
= 100
o
C
3.25
4
8
A
I
D(on)
On State Drain Current
2.8
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.4 A
0.8
2
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
300
55
15
400
70
20
pF
pF
pF
STP2NA50/FI
2/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M93C86-BN7 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-RMN7 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-WBN3 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-WBN6 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-WBN7 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93C-76BN6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C76-BN6 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C-76BN6TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-76DS7P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-76MB6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。