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參數(shù)資料
| 型號： | M93S56-MN3P |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | EEPROM |
| 英文描述： | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| 中文描述： | 4Kbit，2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護(hù) |
| 文件頁數(shù)： | 19/34頁 |
| 文件大?。?/td> | 525K |
| 代理商： | M93S56-MN3P |
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19/34
M93S66, M93S56, M93S46
Table 11. DC Characteristics (M93Sx6, Device Grade 6)
Note: 1. Current product: identified by Process Identification letter F or M.
2. New product: identified by Process Identification letter W or G.
Table 12. DC Characteristics (M93Sx6, Device Grade 3)
Note: 1. Current product: identified by Process Identification letter F or M.
2. New product: identified by Process Identification letter W or G.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±2.5
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
, Q in Hi-Z
±2.5
μA
I
CC
Supply Current
V
CC
= 5V, S = V
IH
, f = 1 MHz, Current
Product
1
1.5
mA
V
CC
= 5V, S = V
IH
, f = 2 MHz, New
Product
2
2
mA
I
CC1
Supply Current (Stand-by)
V
CC
= 5V, S = V
SS
, C = V
SS
,
Current Product
1
50
μA
V
CC
= 5V, S = V
SS
, C = V
SS
,
New Product
2
15
μA
V
IL
Input Low Voltage
V
CC
= 5V ± 10%
–0.45
0.8
V
V
IH
Input High Voltage
V
CC
= 5V ± 10%
2
V
CC
+ 1
V
V
OL
Output Low Voltage
V
CC
= 5V, I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage
V
CC
= 5V, I
OH
= –400μA
2.4
V
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±2.5
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
, Q in Hi-Z
±2.5
μA
I
CC
Supply Current
V
CC
= 5V, S = V
IH
, f = 1 MHz, Current
Product
1
1.5
mA
V
CC
= 5V, S = V
IH
, f = 2 MHz, New
Product
2
2
mA
I
CC1
Supply Current (Stand-by)
V
CC
= 5V, S = V
SS
, C = V
SS
,
Current Product
1
50
μA
V
CC
= 5V, S = V
SS
, C = V
SS
,
New Product
2
15
μA
V
IL
Input Low Voltage
V
CC
= 5V ± 10%
–0.45
0.8
V
V
IH
Input High Voltage
V
CC
= 5V ± 10%
2
V
CC
+ 1
V
V
OL
Output Low Voltage
V
CC
= 5V, I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage
V
CC
= 5V, I
OH
= –400μA
2.4
V
相關(guān)PDF資料 |
PDF描述 |
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| M93S56-DS6 | Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 |
| M93S56-DS3TP | Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 |
| M93S56-DS3TG | Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 |
| M93S56-DS3T | Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 |
| M93S56-DS3P | Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93S56-MN3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-MN3TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-MN3TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-MN6 | 功能描述:電可擦除可編程只讀存儲器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93S56-MN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
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