- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359113 > M93S56-WBN3T (意法半導(dǎo)體) 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection PDF資料下載
參數(shù)資料
| 型號： | M93S56-WBN3T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| 中文描述： | 4Kbit，2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護(hù) |
| 文件頁數(shù)： | 17/34頁 |
| 文件大小： | 525K |
| 代理商： | M93S56-WBN3T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當(dāng)前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
17/34
M93S66, M93S56, M93S46
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC Characteristic tables that follow are de-
rived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parame-
ters.
Table 5. Operating Conditions (M93Sx6)
Table 6. Operating Conditions (M93Sx6-W)
Table 7. Operating Conditions (M93Sx6-R)
Table 8. AC Measurement Conditions (M93Sx6)
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Table 9. AC Measurement Conditions (M93Sx6-W and M93Sx6-R)
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
4.5
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Ambient Operating Temperature (Device Grade 3)
–40
125
°C
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.5
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
1.8
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Pulse Voltages
0.4 V to 2.4 V
V
Input Timing Reference Voltages
1.0 V and 2.0 V
V
Output Timing Reference Voltages
0.8 V and 2.0 V
V
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
V
Input Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
Output Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M93S56-WBN3P | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3G | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3 | Triple 3-Input Positive-NAND Gates 14-PDIP -40 to 85 |
| M93S56-RMN6TP | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-RMN6TG | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93S56-WBN3TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6 | 功能描述:電可擦除可編程只讀存儲器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93S56-WBN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6P | 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。