參數(shù)資料
型號(hào): M93S56-WMN3P
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
中文描述: 4Kbit,2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護(hù)
文件頁數(shù): 20/34頁
文件大小: 525K
代理商: M93S56-WMN3P
M93S66, M93S56, M93S46
20/34
Table 13. DC Characteristics (M93Sx6-W, Device Grade 6)
Note: 1. Current product: identified by Process Identification letter F or M.
2. New product: identified by Process Identification letter W or G.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±2.5
μA
I
LO
Output Leakage Current
0V
V
OUT
V
CC
, Q in Hi-Z
±2.5
μA
I
CC
Supply Current (CMOS
Inputs)
V
CC
= 5V, S = V
IH
, f = 1 MHz, Current
Product
1
1.5
mA
V
CC
= 2.5V, S = V
IH
, f = 1 MHz, Current
Product
1
1
mA
V
CC
= 5V, S = V
IH
, f = 2 MHz, New
Product
2
2
mA
V
CC
= 2.5V, S = V
IH
, f = 2 MHz, New
Product
2
1
mA
I
CC1
Supply Current (Stand-by)
V
CC
= 2.5V, S = V
SS
, C = V
SS
,
Current Product
1
10
μA
V
CC
= 2.5V, S = V
SS
, C = V
SS
,
New Product
2
5
μA
V
IL
Input Low Voltage (D, C, S)
–0.45
0.2 V
CC
V
V
IH
Input High Voltage (D, C, S)
0.7 V
CC
V
CC
+ 1
V
V
OL
Output Low Voltage (Q)
V
CC
= 5V, I
OL
= 2.1mA
0.4
V
V
CC
= 2.5V, I
OL
= 100μA
0.2
V
V
OH
Output High Voltage (Q)
V
CC
= 5V, I
OH
= –400μA
2.4
V
V
CC
= 2.5V, I
OH
= –100μA
V
CC
–0.2
V
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