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參數(shù)資料
| 型號： | M93S56-WMN3T |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| 中文描述： | 4Kbit，2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護 |
| 文件頁數(shù)： | 17/34頁 |
| 文件大?。?/td> | 525K |
| 代理商： | M93S56-WMN3T |
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M93S66, M93S56, M93S46
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC Characteristic tables that follow are de-
rived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parame-
ters.
Table 5. Operating Conditions (M93Sx6)
Table 6. Operating Conditions (M93Sx6-W)
Table 7. Operating Conditions (M93Sx6-R)
Table 8. AC Measurement Conditions (M93Sx6)
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Table 9. AC Measurement Conditions (M93Sx6-W and M93Sx6-R)
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
4.5
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Ambient Operating Temperature (Device Grade 3)
–40
125
°C
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.5
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
1.8
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Pulse Voltages
0.4 V to 2.4 V
V
Input Timing Reference Voltages
1.0 V and 2.0 V
V
Output Timing Reference Voltages
0.8 V and 2.0 V
V
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
V
Input Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
Output Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
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| M93S56-WMN3P | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WDS6 | Triple 3-Input Positive-AND Gates 14-SSOP -40 to 85 |
| M93S56-WDS3TP | Triple 3-Input Positive-AND Gates 14-SSOP -40 to 85 |
| M93S56-WDS3TG | Triple 3-Input Positive-AND Gates 14-SSOP -40 to 85 |
| M93S56-WDS3T | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M93S56-WMN3TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WMN3TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56WMN3TPS | 制造商:STMicroelectronics 功能描述: |
| M93S56-WMN6 | 功能描述:電可擦除可編程只讀存儲器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93S56-WMN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
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