參數(shù)資料
型號： M93S56-WMN6P
廠商： 意法半導體
元件分類： DRAM
英文描述： 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
中文描述： 4Kbit，2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護
文件頁數(shù)： 10/34頁
文件大?。?/td> 525K
代理商： M93S56-WMN6P
M93S66, M93S56, M93S46
10/34
Figure 5. PAWRITE and WRAL Sequence
Note: For the meanings of An, Xn and Dn, please see
Table 2.
and
Table 3.
.
Page Write
A Page Write to Memory (PAWRITE) instruction
contains the first address to be written, followed by
up to 4 data words.
After the receipt of each data word, bits A1-A0 of
the internal address register are incremented, the
high order bits remaining unchanged (A7-A2 for
M93S66, M93S56; A5-A2 for M93S46). Users
must take care, in the software, to ensure that the
last word address has the same upper order ad-
dress bits as the initial address transmitted to
avoid address roll-over.
The Page Write to Memory (PAWRITE) instruction
will not be executed if any of the 4 words address-
es the protected area.
Write Enable (W) must be held High before and
during the instruction. Input address and data, on
Serial Data Input (D) are sampled on the rising
edge of Serial Clock (C).
After the last data bit has been sampled,
the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C).
If Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
AI00890C
S
PAGE
WRITE
1 1
An
A0
DATA IN
D
Q
OP
CODE
Dn
D0
1
BUSY
READY
CHECK
STATUS
ADDR
PRE
W
S
WRITE
ALL
1 0
Xn X0
DATA IN
D
Q
OP
CODE
Dn
D0
0
BUSY
READY
CHECK
STATUS
ADDR
PRE
W
0 1
相關(guān)PDF資料
PDF描述
M93S56-WMN6G Hex Schmitt-Trigger Inverters 14-SOIC -40 to 85
M93S56-WMN6 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WMN3TP 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WMN3TG 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WMN3T 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M93S56-WMN6T 功能描述:電可擦除可編程只讀存儲器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
M93S56-WMN6TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WMN6TP 功能描述:電可擦除可編程只讀存儲器 2KBIT E-EPROM RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
M93S56-WMN6TP/S 制造商:STMicroelectronics 功能描述:EEPROM SERL-MICROWIRE 2KBIT 128X16 3.3V/5V 8PIN SO N - Tape and Reel
M93S56-WMN6TP-CUT TAPE 制造商:ST 功能描述:M93S56 Series 2 Kb (128 x 16) 2.5 V 3 Wire Microwire?Serial EEPROM - SOIC-8
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