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參數(shù)資料
| 型號： | M93S66 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | Serial Microwire Bus EEPROM with Block Protection(串行總線EEPROM) |
| 中文描述： | 微型導(dǎo)線串行總線的EEPROM與街區(qū)保護(hù)（串行總線的EEPROM） |
| 文件頁數(shù)： | 2/24頁 |
| 文件大?。?/td> | 178K |
| 代理商： | M93S66 |
The M93Sx6 memory is accessed through a serial
input (D) and output (Q) using the MICROWIRE
bus protocol. The M93Sx6 is specified at 5V
±
10%,
the M93Sx6-W specified at 2.5V to 5.5V and the
M93Sx6-R specified at 1.8V to 5.5V.
The M93S66/S56/S46 memory is divided into
256/128/64 x16 bit words respectively. These
memory devices are available in both PSDIP8 and
SO8 package.
The M93Sx6 memory is accessed by a set of
instructions which includes Read, Write, Page
Write, Write All and instructions used to set the
memory protection. A Read instruction loads the
VSS
Q
W
PRE
C
D
S
VCC
AI02021
M93Sx6
1
2
3
4
8
7
6
5
Figure 2A. DIP Pin Connections
1
2
3
4
VSS
Q
W
PRE
C
D
S
VCC
AI02022
M93Sx6
8
7
6
5
Figure 2B. SO Pin Connections
DESCRIPTION
(cont’d)
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
–40 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
T
LEAD
Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°
C
V
IO
Input or Output Voltages (Q = V
OH
or Hi-Z)
–0.3 to V
CC
+0.5
V
V
CC
Supply Voltage
–0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
7000
V
Electrostatic Discharge Voltage (Machine model)
(3)
1000
V
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500
).
3. EIAJ IC-121 (Condition C) (200pF, 0
).
Table 2. Absolute Maximum Ratings
(1)
address of the first word to be read into an internal
address pointer. The data contained at this address
is then clocked out serially. The address pointer is
automatically incremented after the data is output
and, if the Chip Select input (S) is held High, the
M93Sx6 can output a sequential stream of data
words. In this way, the memory can be read as a
data stream from 16 to 4096 bits (for the M93S66),
or continuously as the address counter automat-
ically rolls over to ’00’ when the highest address is
reached. Within the time required by a program-
ming cycle (t
W
), up to 4 words may be written with
help of the Page Write instruction. the whole mem-
ory may also be erased, or set to a predetermined
pattern, by using the Write All instruction.
2/24
M93S66, M93S56, M93S46
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93S66BN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S66-BN3 | 功能描述:電可擦除可編程只讀存儲器 5.5V 4K (256x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93S66-BN3G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S66-BN3P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S66-BN3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
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