參數(shù)資料
型號: M95020-WMN5T
廠商: 意法半導體
元件分類: DRAM
英文描述: 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock
中文描述: 4Kbit,2Kbit和1Kbit SPI總線串行EEPROM的高速時鐘
文件頁數(shù): 24/37頁
文件大小: 586K
代理商: M95020-WMN5T
M95040, M95020, M95010
24/37
Table 16. DC Characteristics (M950x0-W, Device Grade 3)
Note: 1. Previous product: identified by Process Identification letter K.
2. Present product: identified by Process Identification letter W or G.
Table 17. DC Characteristics (M950x0-R)
Note: 1. Preliminary data: Product under development. Please contact your nearest ST sales office for information.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
S = V
CC
, V
OUT
= V
SS
or
V
CC
± 2
μA
I
CC
Supply Current
C = 0.1V
CC
/0.9V
CC
at 2 MHz,
V
CC
= 2.5 V, Q = open, Previous Product
1
2
mA
C = 0.1V
CC
/0.9V
CC
at 5 MHz,
V
CC
= 2.5 V, Q = open, Present Product
2
2
mA
I
CC1
Supply Current
(Standby Power mode)
S = V
CC
, V
CC
= 2.5 V, V
IN
= V
SS
or
V
CC
2
μA
V
IL
Input Low Voltage
–0.45
0.3 V
CC
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 1.5 mA, V
CC
= 2.5 V
0.4
V
V
OH
Output High Voltage
I
OH
= –0.4 mA, V
CC
= 2.5 V
0.8 V
CC
V
Symbol
Parameter
Test Condition
Min.
1
Max.
1
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
S = V
CC
, V
OUT
= V
SS
or
V
CC
± 2
μA
I
CC
Supply Current
C = 0.1 V
CC
/0.9. V
CC
at 1 MHz,
V
CC
= 1.8 V, Q = open
1
mA
I
CC1
Supply Current
(Standby Power mode)
S = V
CC
, V
IN
= V
SS
or
V
CC
, V
CC
= 1.8 V
0.5
μA
V
IL
Input Low Voltage
–0.45
0.25 V
CC
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 0.15 mA, V
CC
= 1.8 V
0.3
V
V
OH
Output High Voltage
I
OH
= –0.1 mA, V
CC
= 1.8 V
0.8 V
CC
V
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