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參數(shù)資料
| 型號： | M95080-RDL1T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FIFO |
| 英文描述： | 64 x 36 x 2 bidirectional synchronous FIFO memory 132-BQFP 0 to 70 |
| 中文描述： | 64/32/16/8千位串行SPI總線的EEPROM高速時(shí)鐘 |
| 文件頁數(shù)： | 17/39頁 |
| 文件大?。?/td> | 590K |
| 代理商： | M95080-RDL1T |
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17/39
M95640, M95320
Figure 13. Read from Memory Array (READ) Sequence
Note:
Depending on the memory size, as shown in Table 6, the most significant address bits are Don’t Care.
Read from Memory Array (READ)
As shown in Figure 13, to send this instruction to
the device, Chip Select (S) is first driven Low. The
bits of the instruction byte and address bytes are
then shifted in, on Serial Data Input (D). The ad-
dress is loaded into an internal address register,
and the byte of data at that address is shifted out,
on Serial Data Output (Q).
If Chip Select (S) continues to be driven Low, the
internal address register is automatically incre-
mented, and the byte of data at the new address is
shifted out.
When the highest address is reached, the address
counter rolls over to zero, allowing the Read cycle
to be continued indefinitely. The whole memory
can, therefore, be read with a single READ instruc-
tion.
The Read cycle is terminated by driving Chip Se-
lect (S) High. The rising edge of the Chip Select
(S) signal can occur at any time during the cycle.
The first byte addressed can be any byte within
any page.
The instruction is not accepted, and is not execut-
ed, if a Write cycle is currently in progress.
C
D
AI01793D
S
Q
15
2
1
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27
14 13
3
2
1
0
28 29 30
7
6
5
4
3
1
7
0
High Impedance
Data Out 1
Instruction
16-Bit Address
0
MSB
MSB
2
31
Data Out 2
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| M95080-RDL3T | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95080-RDL5T | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95080-RDL6T | 64 x 36 x 2 bidirectional synchronous FIFO memory 132-BQFP 0 to 70 |
| M95080DL | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95080-BN1T | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
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| M95080-RDW6TP | 功能描述:電可擦除可編程只讀存儲器 16 Kbit and 8 Kbit Seril SPI bus 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M95080-RMB6TG | 功能描述:電可擦除可編程只讀存儲器 16 Kbit and 8 Kbit RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M95080-RMC6TG | 功能描述:電可擦除可編程只讀存儲器 8 Kbit SPI BUS EE 10MHz CR 5ms RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M95080-RMN6P | 功能描述:電可擦除可編程只讀存儲器 Serial SPI Bus 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M95080-RMN6TP | 功能描述:電可擦除可編程只讀存儲器 1.8V to 5.5V EE Bus 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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