參數(shù)資料
型號： M95080-WDW6T
廠商： 意法半導(dǎo)體
英文描述： Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
中文描述： 16Kbit和8Kbit SPI總線串行EEPROM的高速時鐘
文件頁數(shù)： 24/39頁
文件大?。?/td> 590K
代理商： M95080-WDW6T
M95640, M95320
24/39
Table 14. DC Characteristics (M95xxx, temperature range 3)
Note: 1. For all 5V range devices, the device meets the output requirements for both TTL and CMOS standards.
2. Current product: identified by Process Identification letter S.
3. New product: identified by Process Identification letter B.
Table 15. DC Characteristics (M95xxx-W, temperature range 6)
Note: 1. Current product: identified by Process Identification letter S.
2. New product: identified by Process Identification letter V.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
S = V
CC
, V
OUT
= V
SS
or
V
CC
± 2
μA
I
CC
Supply Current
C = 0.1V
CC
/0.9V
CC
at 2 MHz,
V
CC
= 5 V, Q = open, Current Product
2
2
mA
C = 0.1V
CC
/0.9V
CC
at 5 MHz,
V
CC
= 5 V, Q = open, New Product
3
4
mA
I
CC1
Supply Current
(Stand-by)
S = V
CC
, V
CC
= 5 V,
V
IN
= V
SS
or
V
CC
, Current Product
2
20
μA
S = V
CC
, V
CC
= 5 V,
V
IN
= V
SS
or
V
CC
, New Product
3
5
μA
V
IL
Input Low Voltage
–0.45
0.3 V
CC
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+1
V
V
OL
1
Output Low Voltage
I
OL
= 2 mA, V
CC
= 5 V
0.4
V
V
OH
1
Output High Voltage
I
OH
= –2 mA, V
CC
= 5 V
0.8 V
CC
V
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
S = V
CC
, V
OUT
= V
SS
or
V
CC
± 2
μA
I
CC
Supply Current
C = 0.1V
CC
/0.9V
CC
at 2 MHz,
V
CC
= 2.5 V, Q = open, Current Product
1
2
mA
C = 0.1V
CC
/0.9V
CC
at 5 MHz,
V
CC
= 2.5 V, Q = open, New Product
2
3
mA
I
CC1
Supply Current
(Stand-by)
S = V
CC
, V
CC
= 2.5 V,
V
IN
= V
SS
or
V
CC
, Current Product
1
2
μA
S = V
CC
, V
CC
= 2.5 V
V
IN
= V
SS
or
V
CC
, New Product
2
1
μA
V
IL
Input Low Voltage
–0.45
0.3 V
CC
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 1.5 mA, V
CC
= 2.5 V
0.4
V
V
OH
Output High Voltage
I
OH
= –0.4 mA, V
CC
= 2.5 V
0.8 V
CC
V
相關(guān)PDF資料
PDF描述
M95080-WMB3 16Kbit and 8Kbit Serial SPI Bus EEPROM With High Speed Clock
M95080-WMB3T 16Kbit and 8Kbit Serial SPI Bus EEPROM With High Speed Clock
M95080-WMB6 16Kbit and 8Kbit Serial SPI Bus EEPROM With High Speed Clock
M95080-WMB6T 16Kbit and 8Kbit Serial SPI Bus EEPROM With High Speed Clock
M95080-WMN3T 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M95080-WDW6TP 功能描述:電可擦除可編程只讀存儲器 2.5 V to 5.5V 8K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M95080-WDW6TP/S 制造商:STMicroelectronics 功能描述:EEPROM SERL-SPI 8KBIT 1KX8 3.3V/5V 8TSSOP - Tape and Reel
M95080-WMB6TG 功能描述:電可擦除可編程只讀存儲器 2.5 V to 5.5V 8K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M95080-WMN3 功能描述:電可擦除可編程只讀存儲器 5.5V 8K (1Kx8) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M95080-WMN3T 功能描述:電可擦除可編程只讀存儲器 5.5V 8K (1Kx8) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*