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參數(shù)資料
| 型號： | M95128-MN6TPV |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 128 Kbit Serial SPI bus EEPROM with high speed clock |
| 中文描述： | 128千位的SPI高速時鐘總線的EEPROM |
| 文件頁數(shù)： | 28/41頁 |
| 文件大?。?/td> | 207K |
| 代理商： | M95128-MN6TPV |
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DC and AC parameters
M95128, M95128-W, M95128-R
28/41
Table 12.
Table 13.
DC characteristics (M95128, Device Grade 3)
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage
Current
S = V
CC
, V
OUT
= V
SS
or
V
CC
± 2
μA
I
CC
Supply Current
C = 0.1V
CC
/0.9V
CC
at 5 MHz,
V
CC
= 5 V, Q = open
4
mA
I
CC1
Supply Current
(Standby Power mode)
S = V
CC
, V
CC
= 5 V,
V
IN
= V
SS
or
V
CC
5
μA
V
IL
Input Low Voltage
–0.45
0.3 V
CC
V
V
IH
V
OL(1)
V
OH(1)
Input High Voltage
0.7 V
CC
V
CC
+1
V
1.
For all 5V range devices, the device meets the output requirements for both TTL and CMOS standards.
Output Low Voltage
I
OL
= 2 mA, V
CC
= 5 V
0.4
V
Output High Voltage
I
OH
= –2 mA, V
CC
= 5 V
0.8 V
CC
V
DC characteristics (M95128-W, Device Grade 6)
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
S = V
CC
, V
OUT
= V
SS
or
V
CC
± 2
μA
I
CC
Supply Current (Read)
C = 0.1V
CC
/0.9V
CC
at 5MHz,
V
CC
= 2.5V, Q = open
3
mA
C = 0.1V
CC
/0.9V
CC
at 5MHz,
V
CC
= 5V, Q = open
5
mA
I
CC0(1)
1.
Characterized value, not tested in production.
Supply Current (Write)
During t
W
, S = V
CC
,
2.5V < V
CC
< 5.5V
5
mA
I
CC1
Supply Current
(Standby Power mode)
S = V
CC
, V
IN
= V
SS
or
V
CC
,
2.5V < V
CC
< 5.5V
5
μA
V
IL
Input Low Voltage
–0.45
0.3 V
CC
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+1
V
V
OL
Output Low Voltage
V
CC
= 2.5V and I
OL
= 1.5mA or
V
CC
= 5V and I
OL
= 2mA
0.4
V
V
OH
Output High Voltage
V
CC
= 2.5V and I
OH
= –0.4mA or
V
CC
= 5V and I
OH
= –2mA
0.8 V
CC
V
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