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參數資料
| 型號： | M95160-BN5T |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
| 中文描述： | 64/32/16/8千位串行SPI總線的EEPROM高速時鐘 |
| 文件頁數： | 18/40頁 |
| 文件大?。?/td> | 648K |
| 代理商： | M95160-BN5T |
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M95160, M95080
18/40
Write to Memory Array (WRITE)
As shown in
Figure 12.
, to send this instruction to
the device, Chip Select (S) is first driven Low. The
bits of the instruction byte, address byte, and at
least one data byte are then shifted in, on Serial
Data Input (D).
The instruction is terminated by driving Chip Se-
lect (S) High at a byte boundary of the input data.
In the case of
Figure 12.
, this occurs after the
eighth bit of the data byte has been latched in, in-
dicating that the instruction is being used to write
a single byte. The self-timed Write cycle starts,
and continues for a period t
WC
(as specified in
Ta-
ble 19.
to
Table 23.
), at the end of which the Write
in Progress (WIP) bit is reset to 0.
If, though, Chip Select (S) continues to be driven
Low, as shown in
Figure 13.
, the next byte of input
data is shifted in, so that more than a single byte,
starting from the given address towards the end of
the same page, can be written in a single internal
Write cycle.
Each time a new data byte is shifted in, the least
significant bits of the internal address counter are
incremented. If the number of data bytes sent to
the device exceeds the page boundary, the inter-
nal address counter rolls over to the beginning of
the page, and the previous data there are overwrit-
ten with the incoming data. (The page size of
these devices is 32 bytes).
The instruction is not accepted, and is not execut-
ed, under the following conditions:
–
if the Write Enable Latch (WEL) bit has not
been set to 1 (by executing a Write Enable
instruction just before)
–
if a Write cycle is already in progress
–
if the device has not been deselected, by Chip
Select (S) being driven High, at a byte
boundary (after the eighth bit, b0, of the last
data byte that has been latched in)
–
if the addressed page is in the region
protected by the Block Protect (BP1 and BP0)
bits.
Figure 12. Byte Write (WRITE) Sequence
Note: Depending on the memory size, as shown in
Table 7.
, the most significant address bits are Don’t Care.
C
D
AI01795D
S
Q
15
2
1
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27
14 13
3
2
1
0
28 29 30
High Impedance
Instruction
16-Bit Address
0
7
6
5
4
3
2
0
1
Data Byte
31
相關PDF資料 |
PDF描述 |
|---|---|
| M95160-BN6 | 16Kbit and 8Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95160-BN6T | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95160-DL1T | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95160-DL3T | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95160-DL5T | 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M95160-BN6 | 功能描述:電可擦除可編程只讀存儲器 5.5V 16K (2Kx8) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M95160-BN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit and 8Kbit Serial SPI Bus EEPROM With High Speed Clock |
| M95160-BPMN6 | 功能描述:電可擦除可編程只讀存儲器 5.5V 16K (2Kx8) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M95160-DF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16-Kbit serial SPI bus EEPROM with high-speed clock |
| M95160-DFDW6TP | 制造商:STMicroelectronics 功能描述:E-EPROM |
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