參數資料
型號: M95160-BN6T
廠商: 意法半導體
元件分類: DRAM
英文描述: 64/32/16/8 Kbit Serial SPI Bus EEPROM With High Speed Clock
中文描述: 64/32/16/8千位串行SPI總線的EEPROM高速時鐘
文件頁數: 23/40頁
文件大?。?/td> 648K
代理商: M95160-BN6T
23/40
M95160, M95080
Table 13. Capacitance
Symbol
Note: Sampled only, not 100% tested, at T
A
=25°C and a frequency of 5 MHz.
Table 14. DC Characteristics (M95xxx, Device Grade 6)
Note: 1. For all 5V range devices, the device meets the output requirements for both TTL and CMOS standards.
2. Previous product: identified by Process Identification letter L.
3. Present product: identified by Process Identification letter W or G.
Parameter
Test Condition
Min.
Max.
Unit
C
OUT
Output Capacitance (Q)
V
OUT
= 0V
8
pF
C
IN
Input Capacitance (D)
V
IN
= 0V
8
pF
Input Capacitance (other pins)
V
IN
= 0V
6
pF
Symbol
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
S = V
CC
, V
OUT
= V
SS
or
V
CC
± 2
μA
I
CC
Supply Current
C = 0.1V
CC
/0.9V
CC
at 5MHz,
V
CC
= 5 V, Q = open, Previous Product
2
4
mA
C = 0.1V
CC
/0.9V
CC
at 10MHz,
V
CC
= 5 V, Q = open, Present Product
3
5
mA
I
CC1
Supply Current
(Standby Power mode)
S = V
CC
, V
CC
= 5 V,
V
IN
= V
SS
or
V
CC
, Previous Product
2
10
μA
S = V
CC
, V
CC
= 5 V,
V
IN
= V
SS
or
V
CC
, Present Product
3
2
μA
V
IL
Input Low Voltage
–0.45
0.3 V
CC
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+1
V
V
OL
1
Output Low Voltage
I
OL
= 2 mA, V
CC
= 5 V
0.4
V
V
OH
1
Output High Voltage
I
OH
= –2 mA, V
CC
= 5 V
0.8 V
CC
V
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