Schottky Barrier Diodes (SBD)
Publication date: March 2009
SKH00246AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA22D410G
Silicon epitaxial planar type
Manenane
For recti
fi
cation
Overview
Dsoninued
MA22D410G is optimal for general circuit supplies.
Features
Forward current (Average) I
F(AV)
= 2.0 A recti
fi
cation is possible
Low forward voltage V
F
Absolute Maximum Ratings
T
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
30
V
Forward current (Average)
*1
I
F(AV)
2.0
A
Non-repetitive peak forward surge current
*2
I
FSM
30
A
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
panedmanenancetype
°
C
Note) *1: Lead temperature: Tl = 80
°
C, DC wave on
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
htp/panasoncne/scen
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 1.0 A
0.40
V
V
F2
I
F
= 2.0 A
0.45
Reverse current
I
R
V
R
= 30 V
500
m
A
Terminal capacitance
C
t
60
pF
Reverse recovery time
*1
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100
W
19
ns
Thermal resistance (j-a)
*2
R
th(j-a)
Mounted on an alumina PC board
160
°
C/W
Thermal resistance (j-l)
R
th(j-l)
50
°
C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. *1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
1010 mA
R
L
=
100
10%
Input Pulse
t
p
Output Pulse
I
rr
t
r
t
rr
V
R
I
F
t
t
A
*2: Mounted on an alumina PC board (Board: 20 mm
×
50 mm, Soldering land: 2.0 mm
×
2.0 mm + 0.8 mm
×
2.0 mm)
Package
Code
Mini2-F2
Pin Name
1: Anode
2: Cathode
Marking Symbol: 3V
1
2
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