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Multi Purpose Axial Leaded Glass PIN Diodes
RoHs Compliant
V6
Axial Leaded Glass PIN Diodes
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
*Specifications subject to change without notice
Part Number
Package
Style
Rev. Volt.
5
VR < 10 A
VDC
Unless
otherwise noted
Max. Cap.
1MHz
CT @ -50V
pF
Unless
otherwise noted
Max. Series Res.
100MHz
RS @ 10mA
Nominal Characteristics
Carrier
Lifetime
4
μS
I Region
Length
Mils
MA47120
54
35
1.00
1
0.5
3.0
0.4
1N5719
54
100
0.35
1.5
2
1.0
2.0
MA4P203
54
100
0.25
3
1.5
0.1
0.8
MA47047
54
200
0.30
3.0
1.0
2.0
MA47600
54
200
0.30
6.0
2.0
4.0
MA4P404
54
250
0.30
.60 2
1.0
Part Number
Package
Style
Rev. Volt.5
VR < 10 A
VDC
Max. Cap.
1MHz
CT @ -50V
pF
Max. Series Res.
100MHz
RS @ 10mA
Nominal Characteristics
Carrier
Lifetime4
μS
I Region
Length
Mils
MA4PH151
139
100
1.20
0.6
1.0
0.8
MA47110
139
200
0.55
6.0
2.0
4.0
MA47123
139
200
0.50
3.0
1.0
2.0
Part Number
Package
Style
Rev. Volt.5
VR < 10 A
VDC
Max. Cap.
1MHz
CT @ -50V
pF
Max. Series Res.
100MHz
RS @ 50mA
Nominal Characteristics
Carrier
Lifetime4
μS
I Region
Length
Mils
MA47266
146
200
1.50
0.6
3.0
MA4PH301
146
200
1.10
1.0
5.0
Part Number
Package
Style
Rev. Volt.5
VR < 10 A
VDC
Max. Cap.
1MHz
CT @ -100V
pF
Max. Series Res.
100MHz
RS @ 100mA
Nominal Characteristics
Carrier
I Region
Lifetime4
Length
μS
Mils
MA4P504
4
500
0.35
0.60
1.0
2.0
MA4P505
4
500
0.50
0.45
2.0
MA4P506
4
500
0.85
0.30
3.0
2.0
MA4P606
4
1000
0.70
4.0
Notes:
1. Tested at VR = 20V.
2. Tested at IF = 50mA.
3. Tested at VR = 10V.
4. Nominal carrier lifetime, TL, specified at IF = + 10mA , IREV = - 6mA.
5. Minimum specified reverse voltage, VR, is sourced and the resultant reverse leakage current, IR, is measured to be <10μA.