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參數(shù)資料
| 型號(hào)： | MA4AGBLP912 |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 94K |
| 代理商： | MA4AGBLP912 |
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
AlGaAs
RoHS Compliant
Beamlead PIN Diode
M/A-COMProducts
Rev. 2
MA4AGBLP912
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
Low Series Resistance
Low Capacitance
Millimeter Wave Switching & Cutoff Frequency
5 Nanosecond Switching Speed
Can be Driven by a Buffered +5V TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-
Arsenide anode enhanced, beam lead PIN diode.
AlGaAs anodes, which utilize M/A-COM’s patent
pending hetero-junction technology, produce less diode
“On” resistance than conventional GaAs devices. These
devices are fabricated on a OMCVD epitaxial wafer
using a process designed for high device uniformity and
extremely low parasitics. The diodes exhibit low series
resistance, 4
, low capacitance, 28fF, and an extremely
fast switching speed of 5nS. They are fully passivated
with silicon nitride and have an additional layer of a
polymer for scratch protection. The protective coating
prevents damage to the junction and the anode air
bridges during handling and assembly.
Applications
The ultra low capacitance of the MA4AGBLP912 device
makes it ideally suited for use through W-band. The low
RC product and low profile of the beamlead PIN diode
allows for use in microwave and millimeter wave switch
designs, where low insertion loss and high isolation are
required. The operating bias conditions of +10mA for the
low loss state, and 0v, for the isolation state permits the
use of a simple +5V TTL gate driver. These AlGaAs,
beamlead diodes, can be used in switching arrays on
radar systems, high speed ECM circuits, optical
switching networks, instrumentation, and other wideband
multi-throw switch assemblies
.
Absolute Maximum Ratings @ T
AMB
= 25°C
(unless otherwise specified)
Parameter
Absolute Maximum
Reverse Voltage
-50V
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Junction Temperature
+175°C
Forward DC Current
40mA
C.W. Incident Power
+23dBm
Mounting Temperature
+235°C for 10 seconds
MA4AGBLP912
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相關(guān)代理商/技術(shù)參數(shù) |
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| MA4AGBLP912_V3 | 制造商:MA-COM 制造商全稱(chēng):M/A-COM Technology Solutions, Inc. 功能描述:AlGaAs Beamlead PIN Diode |
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| MA4AGFCP910 | 功能描述:PIN 二極管 RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類(lèi)型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| MA4AGP907 | 制造商:M/A-COM Technology Solutions 功能描述:RF PIN DIODE |
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