參數(shù)資料
型號(hào): MA4E2054
英文描述: Surface Mount Low Barrier X-Band Schottky Diode
中文描述: 表面貼裝低門檻X波段肖特基二極管
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 147K
代理商: MA4E2054
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 4.0
Maximum Ratings
Parameter
Operating Temperature
Storage Temperature
Incident RF Power (CW)
Reverse Voltage @ 25oC
Forward Current
Soldering Temperature
Unit
oC
oC
mW
V
mA
oC
Values
-65 to +125
-65 to +125
75
1
3
20
+260 for 5 sec.
1. At 25°C junction temperature. Derate linearly to zero watts at 125°C case temperature.
Electrical Specifications @ +25°C
Parameter
Breakdown Voltage
Reverse Leakage Current
Reverse Leakage Current
Total Capacitance
Condition
I
R
= 10 mA
V
R
= 1 V
V
R
= 3 V
V
R
= 0 V
Symbol
V
B
I
R
I
R
C
T
Specification
3.0 V min.
100 nA max.
500 nA max.
0.30 pF max.
Dynamic Resistance
2
Forward Voltage
I
F
= 10 mA
I
F
= 1 mA
R
D
V
F
17 Ohms max.
250 mV min.
Forward Voltage Difference
1
I
F
= 1 mA
V
F
20 mV max.
1. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations.
2. R
D
= R
S
+ R
J
where R
J
I
F
(in mA)
=
26
Typical RF Performance @ +25°C
Parameter
Mixer Noise Figure
1
Conditions
f = 9.375 GHz
Typical Value
5.7 dB (SSB)
IF Impedance
Tangential Signal
Sensitivity
I
F
= 30 MHz
I
F
= 20 mA
BW = 2 MHz
200 ohms
-55 dBm
Detector Output
Voltage at -30 dBm
2
Detector Output
R
L
= 100K Ohms
I
F
= 20
μ
A
R
L
= 1M Ohm
20 mV
20 mV
1. Fixture tuned to 9.375 GHz.
2. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.
IS = 3 x 10-
8
A
RS = 11
N = 1.05
TT = 0 S
Cj(0) = 0.10 x 10 -
12
pF
Cpar = 0.11 x 10 -
12
pF
VJ = 0.40 V
M = 0.50
EG = 0.69 eV
BV = 5.0 V
IBV = 1 x 10 -
5
A
Spice Model Parameters
2
Surface Mount Low Barrier X-Band Schottky Diodes
MA4E2054 Series
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