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參數(shù)資料
| 型號(hào)： | MA4SW424B-1 |
| 英文描述： | Monolithic SP4T PIN Diode Switch With Integrated Bias Network |
| 中文描述： | 單片SP4T PIN二極管開(kāi)關(guān)與集成偏置網(wǎng)絡(luò) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 651K |
| 代理商： | MA4SW424B-1 |
Features
I
Frequency of Operation: 24 +/- 2 GHz
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Fully Integrated Bias Network
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Series Diode, Low Current Consumption Design :
+12mA for Insertion Loss, 0 Volts for Isolation
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The Device is Wire Bond Compensated at all RF Ports
for RF Matching
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Rugged, Fully Monolithic, Glass Encapsulated
Construction
Description
The MA4SW424B-1 device is a SP4T Switch with Integrated Bias
Network utilizing M/A-COM's HMIC
(Heterolithic Microwave
Integrated Circuit) Process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form series and/or
shunt diodes or vias by imbedding them in a low loss, low
dispersion glass. By using small spacing between elements, this
combination of silicon and glass gives HMIC devices exceptional
low loss and high isolation performance with exceptional
repeatability through lower millimeter frequencies.
Four mil square RF bond pads facilitate the use of low inductance
ribbon bonds, while gold backside metalization allows for manual
or automatic chip bonding using 80Au/20Sn, Sn62/Pb36/Ag2
solders or electrically conductive silver epoxy. Each RF Bond Pad
has adjacent wire-bonded tuning pads available to optimize the RF
Match for a particular frequency response.
Applications
The MA4SW424B-1 SP4T Device is Designed for 24 GHz
Automotive Switching Applications. Insertion Loss is Achieved
with + 12 mA @ + 4 V and Isolation is Achieved with 0V D.C.
Bias. The RF Bias Network is Integrated into the HMIC Swich for
ease of use and space consideration.
Monolithic SP4T PIN Diode Switch
With Integrated Bias Network
M
V 1.00
Outline Drawing
Parameter
Value
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
RF C.W. Incident Power
@ +20 mA
DC Bias Current
+ 30 dBm
+40 mA
Absolute Maximum Ratings
1
@ TA = +25 °C (unless otherwise
specified)
1. Exceeding any of these values may result in permanent
damage
Nominal Die Dimensions
Dim
Inches
Millimeters
Min
0.100
0.131
0.061
0.027
0.064
0.091
0.025
0.052
0.019
Max
0.104
0.135
0.062
0.028
0.065
0.092
0.026
0.052
0.020
Min
2.54
3.33
1.55
0.70
1.63
2.31
0.63
1.31
0.48
Max
2.64
3.43
1.57
0.72
1.65
2.33
0.65
1.33
0.50
A
B
C
D
E
F
G
H
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Note:
1. RF and DC Bond Pads are 4 mils (0.10 mm) Square
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