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參數(shù)資料
| 型號： | MA4TD0410T |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯(lián)放大器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 50K |
| 代理商： | MA4TD0410T |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0410
Features
Cascadable 50
Ω
Gain Block
3dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0410 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0410 is
useful where a general purpose 50
Ω
gain block with
moderate (+16 dBm) gain compression is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0410 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
10
0
1
2
3
4
5
6
7
8
9
0.1
1
10
FREQUENCY (GHz)
G
Id=50mA
Gold-Ceramic Microstrip Package Outline
1,2
1,02
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 ±.030
12,57±0,76
.004 ±.002
0,1±0,05
.035
0,89
.100
2,54
.020
0,51
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Ordering Information
Model No.
MA4TD0410
MA4TD0410T
Package
Hermetic Ceramic
Tape and Reel
Electrical Specifications @ T
A
= +25
°
C, Id = 50 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S
21
2
)
Δ
Gp
Gain Flatness
f
3 dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1 dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 2.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
8.0
-
-
-
-
-
-
-
-
4.75
-
Typ.
9.0
±
0.6
3.0
1.5
1.6
12.5
6.2
25.5
125
5.25
-8.0
Max.
9.5
±
1.0
-
-
-
-
-
-
-
5.75
-
-
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
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