參數(shù)資料
型號: MA5114
廠商: Dynex Semiconductor Ltd.
英文描述: Radiation hard 1024x4 Bit Static RAM
中文描述: 輻射硬1024x4位靜態(tài)RAM
文件頁數(shù): 1/12頁
文件大小: 115K
代理商: MA5114
MA5114
1/12
The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3
μ
m technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when Chip Select is in the HIGH state.
FEATURES
I
3
μ
m CMOS-SOS Technology
I
Latch-up Free
I
Fast Access Time 90ns Typical
I
Total Dose 10
6
Rad(Si)
I
Transient Upset >10
10
Rad(Si)/sec
I
SEU <10
-10
Errors/bitday
I
Single 5V Supply
I
Three State Output
I
Low Standby Current 50
μ
A Typical
I
-55
°
C to +125
°
C Operation
I
All Inputs and Outputs Fully TTL or CMOS
Compatible
I
Fully Static Operation
I
Data Retention at 2V Supply
Figure 2: Block Diagram
Operation Mode
CS
WE
I/O
Power
Read
L
H
D OUT
ISB1
Write
L
L
D IN
Standby
H
X
High Z
ISB2
Figure 1: Truth Table
MA5114
Radiation hard 1024x4 Bit Static RAM
Replaces June 1999 version, DS3591-4.0
DS3591-5.0 January 2000
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