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參數(shù)資料
| 型號： | MA7001 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation Hard 512x9 Bit FIFO |
| 中文描述： | 輻射硬512x9位的FIFO |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 144K |
| 代理商： | MA7001 |
MA7001
2/15
DC CHARACTERISTICS AND RATINGS
Symbol
Parameter
Min.
Max.
Units
V
DD
V
IN
T
A
T
S
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
-0.5
-0.3
-55
-65
7.0
V
V
°
C
°
C
V
DD
+0.3
125
150
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Figure 2: Absolute Maximum Ratings
The following D.C. and A.C. electrical characteristics apply to pre-radiation at T
A
= -55
°
C to +125
°
C, V
DD
= 5V
±
10% and post
100kRad(Si) total dose radiation at T
A
= 25
°
C, V
DD
= 5V
±
10%. GROUP A SUBGROUP 1, 2, 3.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
IH
V
IL
I
IL
I
OL
V
OH
V
OL
I
DD1
I
DD2
I
DD3(L)
Input logic '1' voltage
Input logic '0' voltage
Input leakage current (any input) (Note 4)
Output leakage current (Note 4)
Output logic '1' voltage
Output loglc '0' voltage
Average V
DD
power supply current (Note 3)
Average standby current (Note 3)
Powerdown current (Note 3)
-
-
Note 1
Note 2
l
OUT
= -1mA
l
OUT
= 2mA
Freq = 10MHz
R = W = RS = FL/RT
= V
DD
/2
All Inputs = V
DD
-0.2V
2.0
-
-10
-50
2.4
-
-
-
-
-
-
-
-
-
-
-
V
V
μ
A
μ
A
V
V
mA
mA
mA
0.8
10
50
-
0.4
100
15
3.0
70
8
-
NOTES:
1. Measurements with V
SS
≤
V
IN
≤
V
DD
2.
R
> V
IH
, V
SS
≤
V
OUT
≤
V
DD
3. I
DD
measurements are made wlth outputs open, V
DD
= 5.5V
4. Guaranteed but not measured at -55
°
C
Figure 3a: DC Electrical Characteristics
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