
3–84
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.1
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction)
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = +125
°
C
IDRM
—
—
—
—
10
2
μ
A
mA
Peak On-State Voltage (Either Direction)
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
2%
VTM
—
1.3
1.75
Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
—
—
—
—
12
12
20
35
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 k
, TJ = +125
°
C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
VGT
—
—
—
—
0.2
0.2
0.9
0.9
1.1
1.4
—
—
2
2
2
2.5
—
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
IH
—
6
50
mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1
μ
s, Pulse Width = 2
μ
s)
tgt
—
1.5
—
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85
°
C)
dv/dt(c)
—
5
—
V/
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85
°
C)
dv/dt
—
100
—
V/
μ
s
30
°
60
°
90
°
0
4.0
8.0
12
16
20
24
28
14
12
10
6.0
8.0
4.0
2.0
0
IT(RMS), RMS ON-STATE CURRENT (AMP)
115
FIGURE 2 — POWER DISSIPATION
75
85
95
105
0
2.0
4.0
6.0
8.0
10
12
125
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
dc
180
°
90
°
α
= CONDUCTION ANGLE
α
α
FIGURE 1 — CURRENT DERATING
60
°
α
α
α
= CONDUCTION ANGLE
T
C
°
P
D
α
= 30
°
dc
α
= 180
°