參數(shù)資料
型號(hào): MAC218-4FP
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS
中文描述: 200 V, 8 A, TRIAC
文件頁數(shù): 2/4頁
文件大小: 92K
代理商: MAC218-4FP
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Off-State Current (Either Direction)
(VD = Rated VDRM @ TJ = 125
°
C, Gate Open )
IDRM
2
mA
Peak On-State Voltage (Either Direction)
(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
2%)
VTM
1.7
2
Volts
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12
)
Trigger Mode
MT2(+), G(+) ;
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 k
, TJ = +125
°
C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
VGT
0.2
0.2
0.9
0.9
1.1
1.4
2
2
2
2.5
Volts
Holding Current (Either Direction)
(VD = 24 Vdc, Gate Open, Initiating Current = 200 mA)
IH
50
mA
Critical Rate of Rise of Commutating Off-State Voltage
(VD = Rated VDRM, ITM = 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80
°
C)
dv/dt(c)
5
V/
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TJ = 125
°
C)
dv/dt
100
V/
μ
s
IT(RMS), RMS ON-STATE CURRENT (AMPS)
2
4
6
8
10
1
2
3
4
5
6
125
115
105
8
7
95
1
85
8
7
6
5
4
3
2
0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. Current Derating
0
75
Figure 2. Power Dissipation
0
T
C
°
P
D
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