參數(shù)資料
型號(hào): MAC223-4
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: TRIACs 25 AMPERES RMS 200 thru 800 VOLTS
中文描述: 200 V, 25 A, TRIAC, TO-220AB
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 82K
代理商: MAC223-4
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
1.2
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current(1)
(VD = Rated VDRM)
TJ = 25
°
C
TJ = 125
°
C
IDRM
10
2
μ
A
mA
Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width
2 ms, Duty Cycle
2%)
VTM
1.4
1.85
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2( –), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
20
30
50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(VD = Rated VDRM, TJ = 125
°
C, RL = 10 k)
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
VGT
0.2
0.2
1.1
1.3
0.4
0.4
2
2.5
Volts
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open)
IH
10
50
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
tgt
1.5
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125
°
C)
dv/dt
40
V/
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80
°
C)
dv/dt(c)
5
V/
μ
s
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
P
D
C
75
95
10
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0
0
25
20
40
30
20
10
25
20
5.0
125
115
85
10
FIGURE 1 – RMS CURRENT DERATING
5.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
15
FIGURE 2 – ON-STATE POWER DISSIPATION
0
15
105
°
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