參數(shù)資料
型號: MAC223A10FP
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: ISOLATED TRIACs THYRISTORS 25 AMPERES RMS 200 thru 800 VOLTS
中文描述: 800 V, 25 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: TO-220, FULL PACK-3
文件頁數(shù): 2/4頁
文件大?。?/td> 90K
代理商: MAC223A10FP
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current(1)
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM
10
2
μ
A
mA
Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width
2 ms, Duty Cycle
2%)
VTM
1.4
1.85
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
20
30
50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(VD = Rated VDRM, TJ = 125
°
C, RL = 10 k)
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
VGT
0.2
0.2
1.1
1.3
0.4
0.4
2
2.5
Volts
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open)
IH
10
50
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
tgt
1.5
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125
°
C)
dv/dt
40
V/
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80
°
C)
dv/dt(c)
5
V/
μ
s
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
°
T
C
Figure 2. On-State Power Dissipation
Figure 1. RMS Current Derating
75
95
IT(RMS), RMS ON-STATE CURRENT (AMPS)
25
20
5
125
115
85
10
0
15
105
10
0
0
25
20
40
30
20
10
5
15
IT(RMS), RMS ON-STATE CURRENT (AMPS)
P
D
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