參數(shù)資料
型號: MAC223A8X
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: 4Q Triac
中文描述: 4Q雙向可控硅
封裝: MAC223A8X<SOT186A (TO-220F)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;
文件頁數(shù): 3/8頁
文件大?。?/td> 116K
代理商: MAC223A8X
NXP
Semiconductors
Product specification
Triacs
MAC223A8X
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
junction heatsink
full or half cycle
with heatsink compound
without heatsink compound
in free air
-
-
-
-
-
3.85
5.5
-
K/W
K/W
K/W
R
th j-a
Thermal resistance
junction to ambient
55
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
-
-
2500
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
6
10
11
23
50
50
50
75
mA
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
8
30
18
15
40
60
40
60
mA
mA
mA
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
T2+
T2-
-
-
-
-
7
12
1.3
0.7
0.4
0.1
30
30
1.55
1.5
-
0.5
mA
mA
V
V
V
mA
V
T
V
GT
On-state voltage
Gate trigger voltage
I
T
= 30 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
= 95 C; I
= 25 A;
dI
com
/dt = 9 A/ms; gate open circuit
I
TM
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
100
300
-
V/
μ
s
dV
com
/dt
-
10
-
V/
μ
s
t
gt
-
2
-
μ
s
September 2002
2
Rev 1.000
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