1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes
(MAC320A Series)
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125
°
C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4, MAC320A4
MAC320-6, MAC320A6
MAC320-8, MAC320A8
MAC320-10, MAC320A10
VDRM
200
400
600
800
Volts
Peak Gate Voltage
VGM
IT(RMS)
10
Volts
On-State Current RMS (TC = +75
°
C)
(Full Cycle, Sine Wave, 50 to 60 Hz)
20
Amp
Peak Surge Current (One Full Cycle, 60 Hz, TC = +75
°
C)
preceded and followed by rated current
ITSM
150
Amp
Peak Gate Power (TC = +75
°
C, Pulse Width = 2
μ
s)
Average Gate Power (TC = +75
°
C, t = 8.3 ms)
Peak Gate Current
PGM
PG(AV)
IGM
TJ
Tstg
20
Watts
0.5
Watt
2
Amp
Operating Junction Temperature Range
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.8
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Order this document
by MAC320/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2